Electric Field-Aided Optical Transitions in In0.08Ga0.92As/GaAs MQWs by Using Photocurrent Measurements Electric Field-Aided Optical Transitions in In0.08Ga0.92As/GaAs MQWs by Using Photocurrent Measurements
Journal of the Korean Physical Society
v.46
no.2
2005년, pp.1401 - 1403
Properties of the In0.08Ga0.92As/GaAs multiple quantum wells (MQWs) using metal organic chemical vapor deposition (MOCVD) were examined by using photocurrent (PC) measurements.Several allowed and forbidden exciton transitions in the PC spectrum are well resolved.The experimental transitions are compared with theoretical values obtained from the multi-band effective mass theory. The 11H, 13H, and 11L transitions are red-shifted with increasing applied electric field.Particularly, a blue shift of the 12H transition is observed. This tendency, related to the difference between the skewnesses of the corresponding electron and hole wave functions in the presence of an electric field, is attributed to the difference in the behaviors of the energy shifts. We find that the built-in electric field is about 4.2 × 104 V/cm from the energy shift of the 11H transition.
Properties of the In0.08Ga0.92As/GaAs multiple quantum wells (MQWs) using metal organic chemical vapor deposition (MOCVD) were examined by using photocurrent (PC) measurements.Several allowed and forbidden exciton transitions in the PC spectrum are well resolved.The experimental transitions are compared with theoretical values obtained from the multi-band effective mass theory. The 11H, 13H, and 11L transitions are red-shifted with increasing applied electric field.Particularly, a blue shift of the 12H transition is observed. This tendency, related to the difference between the skewnesses of the corresponding electron and hole wave functions in the presence of an electric field, is attributed to the difference in the behaviors of the energy shifts. We find that the built-in electric field is about 4.2 × 104 V/cm from the energy shift of the 11H transition.
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