The display must ensure high color purity, fast drive time and long life. This limits the development of existing display devices. So many researchers studied to solve these problems using various materials. In this paper, we describe the results of research on display technology using nanoparticle....
The display must ensure high color purity, fast drive time and long life. This limits the development of existing display devices. So many researchers studied to solve these problems using various materials. In this paper, we describe the results of research on display technology using nanoparticle. We fabricated RGB full color QLED and high mobility QD-TFT using a semiconductor nanoparticle.
At first, a fine patterning method for RGB full color display is provided by using spatial light-assisted and locally controlled surface tailoring method. The chemical functionality of an polyethyleneimine (PEI) layer between ETL and the EML layers is locally controlled by spatial light patterning (SLP), which is simultaneously used as a charge control layer and an anchoring agent for the QD layers.
The versatility of this method is demonstrated by patterning crossed stripes and RGB multicolor QLED devices on patterned PEI layers with a luminescence of 1,950 cd m−2 and a current efficiency of 2.9 cd A−1. The SLP process described herein is a general method for fabricating RGB full color QLEDs with marginal toxicity. This process is compatible with the standard complementary metal oxide semiconductor (CMOS) processing technology.
Secondly, colloidal quantum dot (QD) thin-film transistors (TFTs) has been demonstrated with removal of surface organic long ligand, defect passivation, and facile electronic doping by indium nanoparticle. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligand and dopant of indium nanoparticle. The basic mechanism of the ligand exchange effects on CdSe QDs layer has been studied with hydrazine-free ex situreaction derived MCC ligands, such as Sn2S64−, Sn2Se64−, and In2Se42−, to allow benign solution-process available.
Moreover, the robust defect passivation and remote n-type doping effects have been studied by incorporating indium nanoparticles over the CdSe QD layer. Strong electronic coupling and solid defect passivation of CdSe QDs could be achieved by introducing electronically active MCC capping and method of thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain Au electrodes and the QD nanoparticle semiconductors, significantly reducing contact resistance. With benign organic solvents, the the MCC ligand such as Sn2S64−, Sn2Se64−, and In2Se42− ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm2/(V s), respectively. The results used here imply that the incorporation of MCC ligands and indium nanoparticle provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with minimal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.
The display must ensure high color purity, fast drive time and long life. This limits the development of existing display devices. So many researchers studied to solve these problems using various materials. In this paper, we describe the results of research on display technology using nanoparticle. We fabricated RGB full color QLED and high mobility QD-TFT using a semiconductor nanoparticle.
At first, a fine patterning method for RGB full color display is provided by using spatial light-assisted and locally controlled surface tailoring method. The chemical functionality of an polyethyleneimine (PEI) layer between ETL and the EML layers is locally controlled by spatial light patterning (SLP), which is simultaneously used as a charge control layer and an anchoring agent for the QD layers.
The versatility of this method is demonstrated by patterning crossed stripes and RGB multicolor QLED devices on patterned PEI layers with a luminescence of 1,950 cd m−2 and a current efficiency of 2.9 cd A−1. The SLP process described herein is a general method for fabricating RGB full color QLEDs with marginal toxicity. This process is compatible with the standard complementary metal oxide semiconductor (CMOS) processing technology.
Secondly, colloidal quantum dot (QD) thin-film transistors (TFTs) has been demonstrated with removal of surface organic long ligand, defect passivation, and facile electronic doping by indium nanoparticle. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligand and dopant of indium nanoparticle. The basic mechanism of the ligand exchange effects on CdSe QDs layer has been studied with hydrazine-free ex situreaction derived MCC ligands, such as Sn2S64−, Sn2Se64−, and In2Se42−, to allow benign solution-process available.
Moreover, the robust defect passivation and remote n-type doping effects have been studied by incorporating indium nanoparticles over the CdSe QD layer. Strong electronic coupling and solid defect passivation of CdSe QDs could be achieved by introducing electronically active MCC capping and method of thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain Au electrodes and the QD nanoparticle semiconductors, significantly reducing contact resistance. With benign organic solvents, the the MCC ligand such as Sn2S64−, Sn2Se64−, and In2Se42− ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm2/(V s), respectively. The results used here imply that the incorporation of MCC ligands and indium nanoparticle provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with minimal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.
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