In this paper, we study on the plasma polymerized styrene as a negative electron-beam resist. Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of the resist. Molecular weight distribution of plasma polymerized styrene is 1.41-3.93, and deposition rates of that are 32-383[.angs./min] with discharge power. Swelling and etching resistance becomes . more improved with increasing discharge power during plasma polymerization. Etch rate by RIE is higher than that by plasma etching.
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