초록

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Abstract ▼ AI-Helper

The dependence of the electrical resistivity on the eutectic composition and growth rates was investigated in the unidirectionally solidified Sb-InSb and Sn-Bi eutectic alloy systems, which were generally classified into the groups of f-f and nf-f eutectic system. Sb-InSb alloys containing 26-34wt....

The dependence of the electrical resistivity on the eutectic composition and growth rates was investigated in the unidirectionally solidified Sb-InSb and Sn-Bi eutectic alloy systems, which were generally classified into the groups of f-f and nf-f eutectic system. Sb-InSb alloys containing 26-34wt.% In and Sn-Bi alloys containing 53-65wt.%Bi were prepared in vacuum sealed in a silica tube, and then these were unidirectionally solidified. Electrical resistivity of the specimens prepared by cutting the crystal section in parallel with the transverse direction and by cutting in longitudinal direction was measured. As the growth rate increased, the Sb-InSb and Sn-Bi eutectic alloys showed that the resistivity of longitudinal to the growth direction was increased but that of transverse to the growth direction was decreased. In the case of Sb-InSb eutectic alloy, increas~ng the phase boundary area and decreasing the fiber directionallity caused to increase the $p \; \parallel$ , while increasing the phase boundary area increased the $p \; \\perp$ As expected, the eutectic microstructure could be analysed well in terms of electrical resistivity.