A new DC drain-current model of GaAs MESFET with improved accuracy is proposed in this paper. The proposed model includes the decrease of current slope according to gate voltages. It is possible to represent a transconductance compression using the proposed model. It shows improved transconductance and output resistance in accuracy from the forward biased gate region to near the cutoff region. The wquaer error of saturation current is decreased by 46% compared with Statz model. The proposed model can be useful for the simulation of large-signal operation and harmonic distortion.
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