Abstract

The delay models for CMOS invertr presented so far predicted the delay time quite accurately whens input transition-time is very small. But the problem that the accuracy is inclined to decrease becomes apparent as input transition tiem increases. In this paper, a delay model for CMOS inverter is presented, which accuractely predicts the delay time even though input transition-time increases. To inverter must be included in modeling process because the main reason of inaccuracy as input transition tiem is the leakage current through the complementary MOS. For efficient modeling, this paper first models the MOSes with simple I-V charcteristic, with which both the pMOS and the nMOS are considered easily in calculating the inverter delay times. This resulting model needs few parameters and re-models each MOS effectively and simply evaluates output voltage to predict delay time, delay values obtained from this effectively and simply evaluates output voltage to predict delay time, delay values obtained from this model have been found to be within about 5% error rate of the SPICE results. The calculation time to predict the delay time with the model from this paper has the speed of more than 70times as fast as to the SPICE.

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