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Abstract

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

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참고문헌 (22)

  1. Preparation of thin-film $(Ba_{0.5}, Sr_{0.5}) TiO_3$ by the laser Ablation technique and electrical properties , S.G. Yoon;J.C. Lee;A. Safari , J. Appl. Phys. / v.76,pp.2999-3003, 1994
  2. Preparation and Properties of (Ba, Sr) $TiO_3$ Thin Films by RF Magentron Sputtering , N. Ichinose;T. Ogiwara , Jpn. J. Appl. Phys. / v.32,pp.4115-4117, 1993
  3. Ferroelectric Properties in Epitaxially grown $Ba_xSr_{1x}TiO_3$ thin Films , K. Abe;S. Komatsu , J. Appl. Phys. / v.77,pp.6461-6465, 1995
  4. Influence of the laser wavelength on the Microstructure of Laser Ablated $Ba_{0.5}Sr_{0.5}TiO_3$ films , F. Tcheliebou;S. Baik , J. Appl. Phys. / v.80,pp.7046-7051, 1996
  5. MOCVD of $BaSrTiO_3$ for ULSI DRAMs , P. Kirlin;s. Bilodeau;P. Van. Bursilk , Integr. Ferroelec. / v.7,pp.307-318, 1995
  6. Deposition of $Ba_{1-x}Sr_xTiO_3$ and $BaSrTiO_3$ var Liquid Source CVD for ULSI DRAMs , L.D. Mcmillan;M. Huffman;T.L. Roberts;M.C. Scott;C.A. Paz de Araujo , Integr. Ferroelec. / v.4,pp.319-324, 1994
  7. Deposition of Extremely thin (Ba, Sr) $TiO_3$ thin Films for Ultra-large-scale Integrated Dynamic Random Access Memory Application , C.S. Hwang;s.O. Park;H.J. Cho;C.S. Kang;H.K. Kang.;S.I. Lee;M.Y. Lee , Appl. Phys. Lett. / v.67,pp.2819-2821, 1995
  8. High Dielectric Constant $(Ba, Sr) TiO_3$ thin Films Prepared in $RuO_2$/sapphire , K. Takemura;T. Sakuma;Y. Miyasaka , Appl. Phys. Lett. / v.64,pp.2967-2969, 1994
  9. $RuO_2$ films by Metal-organic Chemical Vapor Depositon , J. Si;S.B. Desu , J. Mater. Res. / v.8,pp.2644-2648, 1993
  10. Characterization of Reactively Sputtered Rytherenium Dioxide for very Large Scale Integrated Metallization , L. Krusin-Elbaum;M. Wittmer;D.S. Lee , Appl. Phys. Lett. / v.50,pp.1879-1881, 1987
  11. Plasma Etching of $RuO_2$ Thin Films , S. Saito;K. Kuramasu , Jpn. J. Appl. Phys. / v.31,pp.135-138, 1992
  12. S. Trasatti;G. Lodi;S. Trasatti , Electrodes of Conductive Metallic Oxides / v.,pp.348, 1980
  13. Microstructural Control of $RuO_2$ Electrode and the Related Properties of $(Ba, Sr)TiO_3$ Thin Films , D.K. Choi;J.Y. Choi;J.H. Won;S.H. Paek;S.B. Desu(ed.);R.Ramesh(ed.);B.A. Tuttle(ed.);R.E. Jones(ed.);I.K. Yoo(ed.) , Ferroelectric Thin Films C. / v.433,pp.45-50, 1996
  14. Advantages of RuOx Bottom Electrode in the Dielectric and Leakage Characteristics of $(Ba, Sr) TiO_3$ Capacitor , Y.T. Kim;C.W. Lee , Jpn. J. Appl. Phys. / v.35,pp.6153-6156, 1996
  15. Effect of $O_2/Ar$ Ratio and Annealing on the Properties of $(Ba, Sr) TiO_3$ Films Prepared by RF Magnetron Sputtering , J, Lee.;Y.C. Choi;B.S. Lee , Jpn. J. Appl. Phys. / v.36,pp.3644-3648, 1997
  16. Electrical and Microstructural Degradation with Deposited by RF Magnetron Sputtering , S.H. Paek;J. Won;K.S. Lee;J.S. Choi;C.S. Park , Jpn. J. Appl. Phys. / v.35,pp.5757-5762, 1996
  17. R. Waser;D.M. Smyth;C.A. Paz de Araujo(ed.);J.F. Scott(ed.);G.W. Talyor(ed.) , Ferroelectric Thin Film:Synthetic and Basic Properties / v.,pp.50, 1996
  18. Electronic defect and trap-related current of $(Ba_{0.4}, Sr_{0.6}) TiO_3$ Thin Films , Y.P. Wang;T.Y. Tseng , J. Appl. Phys. / v.81,pp.6762-6766, 1997
  19. Defect Chemistry of Relaxor Ferroelectrics and the Implications for Dielectric Degradation , D.M. Smyth;M.P. Harmer;P.Peng , J. Am. Ceram. Soc. / v.72,pp.2276-2278, 1989
  20. W.J. Lee , Ph. D. Thesis, Korea Advance Institute of Science and Technology / v.,pp., 1995
  21. Electrochemical Boundary Conditions for Resistance Degradation of Doped Alkaline-Earth Titanates , R.M. Waser , J. Am. Ceram. Soc. / v.72,pp.2234-2240, 1989
  22. Preparation and Characterization of $Ba_xSr_{1-x}TiO_3$ Thin Films by a Sol-Gel Technique , D.M. Yahan;A.Safari;L.C. Klein , J. Am. Ceram. Soc. / v.79,pp.1593-1598, 1996

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