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논문 상세정보

MTS를 사용한 LPCVD 법에 의한 (100)Si 위의 $\\beta$-SiC 증착 및 계면특성

Interfacial Characteristics of $\\beta$-SiC Film Growth on (100) Si by LPCVD Using MTS

Abstract

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

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이 논문을 인용한 문헌 (3)

  1. 1998. "Deposition and Photoluminescence Characteristics of Silicon Carbide Thin Films on Porous Silicon" 요업학회지 = Journal of the Korean Ceramic Society, 35(5): 486~492 
  2. ; ; ; ; Koichi Niihara 2001. "Deposition of 3C-SiC Films by Plasma-enhanced Chemical Vapor Deposition (II): Mechanical Properties of SiC Films by Nanoindentation Technique" 한국세라믹학회지 = Journal of the Korean Ceramic Society, 38(4): 365~369 
  3. 2001. "Deposition of 3C-SiC Films by Plasma-enhanced Chemical Vapor Deposition (I): Deposition Behaviors of SiC with Deposition Parameters" 한국세라믹학회지 = Journal of the Korean Ceramic Society, 38(6): 531~536 

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