초록

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Abstract ▼ AI-Helper

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$...

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.