• 검색어에 아래의 연산자를 사용하시면 더 정확한 검색결과를 얻을 수 있습니다.
  • 검색연산자
검색연산자 기능 검색시 예
() 우선순위가 가장 높은 연산자 예1) (나노 (기계 | machine))
공백 두 개의 검색어(식)을 모두 포함하고 있는 문서 검색 예1) (나노 기계)
예2) 나노 장영실
| 두 개의 검색어(식) 중 하나 이상 포함하고 있는 문서 검색 예1) (줄기세포 | 면역)
예2) 줄기세포 | 장영실
! NOT 이후에 있는 검색어가 포함된 문서는 제외 예1) (황금 !백금)
예2) !image
* 검색어의 *란에 0개 이상의 임의의 문자가 포함된 문서 검색 예) semi*
"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"
쳇봇 이모티콘
ScienceON 챗봇입니다.
궁금한 것은 저에게 물어봐주세요.

논문 상세정보


The current drive in a MOSFET is limited by the intrinsic channel resistance. All other parasitic elements in a device structure perform significant functions leading to degradation in the device performance. These other resistances must be less than 10$\%$-20$\%$ of the channel resistance. To meet the necessary requirements, the methodology of separation and quantification of those resistances should be investigated. In this paper, we developed an extraction method for the resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that gathers below the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

참고문헌 (17)

  1. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices. Cambridge, MA: Cambridge Univ. Press, pp. 30-45, 1998 
  2. M. Y. Kwong, C. H. Choi, R. Kasnavi, P. Griffin, and R. Dutton, 'Series Resistance Calculation for Source/Drain Extension Regions Using 2-D Device Simulation,' IEEE Trans. Electron Devices, vol. 49, no. 7, July 2002 
  3. C.M. Osburn and K.R. Bellur, 'Low parasitic resistance contacts for scaled ULSI devices,' Thin Solid Films, vol. 332, pp. 428-436, 1998 
  4. K. K. Ng and W. T. Lynch, 'Analysis of the gatevoltage-dependent series resistance of MOSFETs,' IEEE Trans. Electron Devices, vol. 33, pp. 965-972, July 1986 
  5. J. O. Borland, 'Low Temperature Shallow Junction Formation for 70nm Technology Node and Beyond,' in Proc. Mat. Res. Soc. Symp, pp. 1-8, 2002 
  6. R. J. Luyken, T. Schulz, J. Hartwich, L. Dreeskornfeld, M. Stadele, and W. Rosner, 'Design Considerations for Fully Depleted SOI Transistors in the 25-50 nmregime,' Solid-State Electronics, vol. 47, no. 7, pp. 1199-1204, July 2003 
  7. Y. Taur, 'MOSFET channel length extraction and interpretation,' IEEE Trans. Electron Devices, vol. 47, pp. 160-170, Jan. 2000 
  8. J. H. Lee, K. D. Lee, K. H. Lee, T. K. Kim, Y. K. Park, and J. T. Kong, 'Systematic Global Calibration of a Process Simulator,' in Proc. MSM2000, 2000, pp. 121-125 
  9. T. H. Gil, H. S. Kim and Y. S. Kim, 'Characteristics of Ni/SiC Schottky Diodes Grown by ICP-CVD,'KIEE Int. Trans. On EA, Vol.4-C, No.3, pp. 111-116, 2004 
  10. Y. M. Kim, I. S. Yu and J. H. Lee, 'Fabrication and Characterization of Silicon Probe Tip for Vertical Probe Card Using MEMS Technology,' KIEE Int. Trans. On EA, Vol.4-C, No.4, pp. 149-154, 2004 
  11. A. Magna, P. Alippi, L. Colombo, and M. Strobel, 'Atomic scale computer aided design for novel semiconductor devices,' Computational Materials Science, vol. 27, iss. 1, pp. 10-15, Mar. 2003 
  12. C. J. Kang, D. Jeon, and Y. Kuk, 'Channel length effect in a MOSFET structure by scanning capacitance mieroscopuy,' Surface Scince, vol. 544, iss. 1, pp. 87-92,Oct. 2003 
  13. B. S. Kim, H. U. Jeong and H. W. Lee, 'Effects of Tungsten Size and Nickel Addition in DC acr Resistance of Cu-W Electrode,' KIEE Int. Trans. On EA, Vol.4-C, No.2, pp. 68-72, 2003 
  14. S. H. Woo and H. S. Lee, 'Characteristics of Electron Beam Extraction in Large Area Electron Beam Generator,' KIEE Int. Trans. On EA, Vol.4-C, No.1, pp. 10-14, 2004 
  15. International Technology Roadmap for Semiconductors, SEMATECH, Austin, TX, 2001 
  16. S. D. Kim, C. M. Park, and J. Woo, 'Advanced Model and Analysis for Series Resistance in Sub-100nm CMOS including Poly-depletion and overlap doping gradient effect,' in Proc. IEDM '00, pp. 723-726, 2000 
  17. P. Degond and A. Ayyadi. 'A Coupled Schrodinger Drift-Diffusion Model for Quantum Semiconductor Device Simulations,' Journal of Computational Physics, vol. 181, pp. 222-228, 2002 

이 논문을 인용한 문헌 (0)

  1. 이 논문을 인용한 문헌 없음


원문 PDF 다운로드

  • ScienceON :

원문 URL 링크

원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다. (원문복사서비스 안내 바로 가기)

상세조회 0건 원문조회 0건

DOI 인용 스타일