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논문 상세정보

PECVD SiNx 박막의 다결정 실리콘 태양전지에 미치는 영향

Influence of PECVD SiNx Layer on Multicrystalline Silicon Solar Cell

Abstract

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

참고문헌 (9)

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이 논문을 인용한 문헌 (1)

  1. Kim, Ji-Sun ; Kim, Bum-Ho ; Lee, Soo-Hong 2008. "Surface Reflectance Reduction of Multicrystalline Silicon Wafers for Solar Cells by Acid Texturing" 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, 21(2): 99~103 

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