[논문]Strained-SiGe Complementary MOSFETs Adopting Different Thicknesses of Silicon Cap Layers for Low Power and High Performance Applications

Mheen, Bong-Ki; Song, Young-Joo; Kang, Jin-Young; Hong,  Song-Cheol

doi:10.4218/etrij.05.0104.0148

Strained-SiGe Complementary MOSFETs Adopting Different Thicknesses of Silicon Cap Layers for Low Power and High Performance Applications 원문보기

ETRI journal, v.27 no.4, 2005년, pp.439 - 445

Mheen, Bong-Ki (Basic Research Laboratory, ETRI) , Song, Young-Joo (Basic Research Laboratory, ETRI) , Kang, Jin-Young (Basic Research Laboratory, ETRI) , Hong, Song-Cheol (Department of EECS, KAIST)

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We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

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The in-situ phosphorus-doped (> 1019 cm-3) poly-Si by reduced pressure chemical vapor deposition at 550°C was used as a gate material. The samples were characterized by an on-wafer test using an HP4156B semiconductor parameter analyzer for DC measurements. The 1/f noise was measured by a set-up using an Agilent E4440A spectrum analyzer with an EG&G 5185 wideband low noise preamplifier for 10 Hz to 1 MHz.
2 CMOS with a thinner Si-cap layer (B08) exhibited the increased transconductance and driving current for the pMOSFET case, while the nMOSFET showed degraded properties, compared with the standard Si CMOS (B12). To investigate the carrier (electron) distribution in Si0.8Ge0.2 nMOSFETs in this study, device simulations using SILVACO wens conducted at the given gate bias. Figure 4 illustrates the conduction band profile of both SioEGes devices.

참고문헌 (12)

Hyun, Seok-Bong, Tak, Geum-Young, Kim, Sun-Hee, Kim, Byung-Jo, Ko, Jin-Ho, Park, Seong-Su. A Dual-Mode 2.4-GHz CMOS Transceiver for High-Rate Bluetooth Systems. ETRI journal, vol.26, no.3, 229-240.

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Kim, Cheon-Soo, Kim, Sung-Do, Park, Mun-Yang, Yu, Hyun-Kyu. Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers. ETRI journal, vol.25, no.3, 195-202.

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Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B.. SiGe-channel heterojunction p-MOSFET's. IEEE transactions on electron devices, vol.41, no.1, 90-101.

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Fischetti, M. V., Laux, S. E.. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys. Journal of applied physics, vol.80, no.4, 2234-2252.

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Ma, S.T., Brews, J.R.. Comparison of deep-submicrometer conventional and retrograde n-MOSFETs. IEEE transactions on electron devices, vol.47, no.8, 1573-1579.

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Cahill, David G., Ford, Wayne K., Goodson, Kenneth E., Mahan, Gerald D., Majumdar, Arun, Maris, Humphrey J., Merlin, Roberto, Phillpot, Simon R.. Nanoscale thermal transport. Journal of applied physics, vol.93, no.2, 793-818.

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10.1063/1.1713126
Jenkins, K.A., Rim, K.. Measurement of the effect of self-heating in strained-silicon MOSFETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.23, no.6, 360-362.

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Ghibaudo, Gérard, Chroboczek, Jan. On the origin of the LF noise in Si/Ge MOSFETs. Solid-state electronics, vol.46, no.3, 393-398.

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Li, P.W, Liao, W.M. Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling. Solid-state electronics, vol.46, no.1, 39-44.

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Song, Young-Joo, Shim, Kyu-Hwan, Kang, Jin-Young, Cho, Kyoung-Ik. DC and RF Characteristics of $Si_{0.8}Ge_{0.2}$ pMOSFETs: Enhanced Operation Speed and Low 1/f Noise. ETRI journal, vol.25, no.3, 203-209.

원문보기 상세보기
Tsai, Ming-Horn, Ma, Tso-Ping. The impact of device scaling on the current fluctuations in MOSFET's. IEEE transactions on electron devices, vol.41, no.11, 2061-2068.

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Strained-SiGe Complementary MOSFETs Adopting Different Thicknesses of Silicon Cap Layers for Low Power and High Performance Applications 원문보기

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Strained-SiGe Complementary MOSFETs Adopting Different Thicknesses of Silicon Cap Layers for Low Power and High Performance Applications 원문보기

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