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NTIS 바로가기ETRI journal, v.27 no.1, 2005년, pp.75 - 80
Kim, Young-Gi (Department of Data Communication, Anyang University) , Kim, Chang-Woo (College of Electronic and Information Engineering, Kyung Hee University) , Kim, Seong-Il (Basic Research Laboratory, Electronics and Telecommunications Research Institute) , Min, Byoung-Gue (Basic Research Laboratory, Electronics and Telecommunications Research Institute) , Lee, Jong-Min (Basic Research Laboratory, Electronics and Telecommunications Research Institute) , Lee, Kyung-Ho (Basic Research Laboratory, Electronics and Telecommunications Research Institute)
This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistan...
Ho, W.J., Chang, M.F., Sailer, A., Zampardi, P., Deakin, D., McDermott, B., Pierson, R., Higgins, J.A., Waldrop, J.. GaInP/GaAs HBTs for high-speed integrated circuit applications. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.14, no.12, 572-574.
Fresina, M.T., Ahmari, D.A., Mares, P.J., Hartmann, Q.J., Feng, M., Stillman, G.E.. High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.16, no.12, 540-541.
Hong, B.W.-P., Song, Jong-In, Palmstrom, C.J., Van der Gaag, B., Chough, Kyung-Bae, Hayes, J.R.. DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors. IEEE transactions on electron devices, vol.41, no.1, 19-25.
Perez, S., Floriot, D., Maurin, P., Bouquet, P., Gutierrez, P.M., Obregon, J., Delage, S.L.. Extremely low noise InGaP/GaAs HBT oscillator at C-band. Electronics letters, vol.34, no.8, 813-814.
Do, M.A., Zhao, R., Yeo, K.S., Ma, J.-G.. Fully integrated 10 GHz CMOS VCO. Electronics letters, vol.37, no.16, 1021-1023.
Kobayashi, K.W., Tran, L.T., Oki, A.K., Block, T., Streit, D.C.. A coplanar waveguide InAlAs/InGaAs HBT monolithic Ku-band VCO. IEEE microwave and guided wave letters : a publication of the IEEE Microwave Theory and Techniques Society, vol.5, no.9, 311-312.
Djahanshahi, H., Saniei, N., Voinigescu, S.P., Malikpaard, M.C., Salama, C.A.T.. A 20-GHz InP-HBT voltage-controlled oscillator with wide frequency tuning range. IEEE transactions on microwave theory and techniques, vol.49, no.9, 1566-1572.
Baek, D., Ko, S., Kim, J.-G., Kim, D.-W., Hong, S.. gt;tex<$Ku$>/tex<-Band InGaP–GaAs HBT MMIC VCOs With Balanced and Differential Topologies. IEEE transactions on microwave theory and techniques, vol.52, no.4, 1353-1359.
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