High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin fi...
High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.
High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.
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대상 데이터
Figure 3(a) shows current-voltage-luminescence (J-V-L) output profiles for an OLED using an ITO anode grown on PES at room temperature by PLD. The device structure included a 60 nm thick N, N’-bis-[1-naphthyl (N, N’-diphenyl- 1, 10-biph-enyl-4, 4'-diamine)] (NPB) as a hole transport layer; a 60 nm thick tris-[8-hydroxyquinoline] aluminum (Alq) as an electron transport layer, and a cathode. The cathode included a 12 A thick LiF and a 1,000 A thick Al layer.
이론/모형
The electrical properties, including resistivity, sheet resistance, mobility, and carrier concentration, were measured using a Hall measurement system (HL 5500PC). Hall mobility and carrier concentration measurements were made using the Van der Pauw method at room temperature with a magnetic field of 5000 G Optical transmission measurements wee obtained using an ultraviolet (UV)-visible near-infrared spectrometer (U-3501, by Hitachi). The surface morphology of the films was determined using a non-contact mode atomic force microscopy.
참고문헌 (15)
Hamberg, I., Granqvist, C. G..
Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windows.
Journal of applied physics,
vol.60,
no.11,
R123-R160.
Zhang, Keran, Zhu, Furong, Huan, C.H.A, Wee, A.T.S.
Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperature.
Thin solid films,
vol.376,
no.1,
255-263.
Vasu, V., Subrahmanyam, A..
Reaction kinetics of the formation of indium tin oxide films grown by spray pyrolysis.
Thin solid films,
vol.193,
no.2,
696-703.
Young, N. D., Bunn, R. M., Wilks, R. W., McCulloch, D. J., Deane, S. C., Edwards, M. J., Harkin, G., Pearson, A. D..
Thin‐film‐transistor‐ and diode‐addressed AMLCDs on polymer substrates.
Journal of the Society for Information Display,
vol.5,
no.3,
275-281.
Kim, H., Horwitz, J. S., Kushto, G. P., Kafafi, Z. H., Chrisey, D. B..
Indium tin oxide thin films grown on flexible plastic substrates by pulsed-laser deposition for organic light-emitting diodes.
Applied physics letters,
vol.79,
no.3,
284-286.
Park, Nae-Man, Kim, Sang Hyeob, Sung, Gun Yong.
Band gap engineering of SiCN film grown by pulsed laser deposition.
Journal of applied physics,
vol.94,
no.4,
2725-2728.
Park, Nae-Man, Kim, Sang-Hyeob, Sung, Gun-Yong.
Amorphous Silicon Carbon Nitride Films Grown by the Pulsed Laser Deposition of a SiC-$Si_3N_4$ Mixed Target.
ETRI journal,
vol.26,
no.3,
257-261.
Hwang, Man-Soo, Lee, Hye Jung, Jeong, Heui Seob, Seo, Yong Woon, Kwon, Sang Jik.
The effect of pulsed magnetron sputtering on the properties of indium tin oxide thin films.
Surface & coatings technology,
vol.171,
no.1,
29-33.
Ma, Jin, Li, Shu-Ying, Zhao, Jun-qing, Ma, Hong-Lei.
Preparation and properties of indium tin oxide films deposited on polyester substrates by reactive evaporation.
Thin solid films,
vol.307,
no.1,
200-202.
Izumi, Hirokazu, Ishihara, Tsuguo, Yoshioka, Hideki, Motoyama, Muneyuki.
Electrical properties of crystalline ITO films prepared at room temperature by pulsed laser deposition on plastic substrates.
Thin solid films,
vol.411,
no.1,
32-35.
Park, Sung Kyu, Han, Jeong In, Kim, Won Keun, Kwak, Min Gi.
Deposition of indium–tin-oxide films on polymer substrates for application in plastic-based flat panel displays.
Thin solid films,
vol.397,
no.1,
49-55.
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