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논문 상세정보

Analysis and Calibration of Transient Enhanced Diffusion for Indium Impurity in Nanoscale Semiconductor Devices


We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

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참고문헌 (19)

  1. L. Ihaddadene-Le Coq, J. Marcon, A. Dush-Nicolini, K. Masmoudi, and K. Ketata,'Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon,' Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms., vol. 216, pp. 303-308, 2004 
  2. L. C. Kizilyalli, T. L. Rich., F. A. Stevie, and C. S. Rafferty,'Diffusion parameters of indium for silicon process modeling', J. Appl. Phys. 80(9), pp. 4944- 4947, Nov. 1996 
  3. M. Cao, P. Griffin, P. Vande Voorde, C. Diaz and W. Greene,'Transient-Enhanced Diffusion of Indium and its Effects on Electrical Characteristics of Deep Sub-Micron nMOSFETs,' in Proc. Symp. on VLSI Technology., pp. 85-86, 1997 
  4. Clemens Heitzinger and Siegfried Selberherr, 'On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem', Microelectronics Journal., vol. 35, iss. 2, pp. 167-171, Feb. 2004 
  5. Farida Mansour, Ramdane Mahamdi, Laurent Jalabert and Pierre Temple-Boyer, 'Bron dirrusion into nitrogen doped silicon films for P+ polysilicon gate structures' Thin Solid Films., vol. 434, iss. 23, pp.152-156, June 2003. User' Manual of TSUPREM4- version2003.2, Synopsys, June, 2003 
  6. A. La Magna, S. Coffa, S. Libertino, Matthias Strobel and L. Colombo, 'tomistic simulations and the requirements of process simulator for novel semiconductor devices,' Computational Materials Science., vol. 24, iss. 1-2, pp. 213-222, May 2002 
  7. Y. J. Seo, 'ectrical and Photoluminescence Characteristics of Nanocrystalline Silicon-Oxygen Superlattice for Silicon on Insulator Application' KIEE Int. Trans. on EA., Vol. 2-C, no. 5, pp. 258-261, 2002 
  8. G. Mannino, V. Privitera, S. Solmi, and N. E. B. Cowern,'Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation,' Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms., vol. 186, pp. 246-300, 2002 
  9. Young-Don Ko , Yuhee Kim , Dongkwon Park and Ilgu Yun , 'Nonlinear diffusion process modeling using response surface methodology and variable transformation,' Robotics and Computer-Integrated Manufacturing., vol. 20, iss. 2, pp. 121-125, April 2004 
  10. O. I. Velichko, V. A. Dobrushkin, A. N. Muchynski, V. A. Tsurko and V. A. Zhuk, 'imulation of Coupled Diffusion of Impurity Atoms and Point Defects under Nonequilibrium Conditions in Local Domain' Journal of Computational Physics., vol. 178, iss. 1, pp. 196-209, May 2002 
  11. A. I. Titov, V. S. Belyakov and A. Yu. Azarov, 'Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory,' Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms., vol. 212, pp. 169-178, Dec. 2003 
  12. P. Degond and A. El Ayyadi, ' Coupled Schrodinger Drift-Diffusion Model for Quantum Semiconductor Device Simulations,' Journal of Computational Physics., vol. 181, iss. 1, pp. 222-259, Sept. 2002 
  13. J. S. Lee, M. I. Kang, K. S. Park, B. D. Min, J. w. Hwang, K. Keem and S. S. Kim, 'elective Synthesis and Coating of ZnO Nanomaterials' KIEE Int. Trans. on EA., Vol. 2-C, no. 6, pp. 314-320, 2002 
  14. G. G. Shahidi, Bijan Davari, Thomas J. Bucelot, et. al.,'Indium Channel Implant for Improved Short- Channel Behavior of Submicrometer NMOSFET's,' IEEE ED Letters, vol. 14, no. 8, ,pp. 409-411, Aug. 1993 
  15. Y. Oh and D. Ward,'A calibrated model for trapping of implanted dopants at material interface during thermal annealing,' in Proc. IEDM '99., pp. 509-513, 1999 
  16. B. Colombeau, N. E. B. Cowern, F. Cristiano, P. Calvo, Y. Lamrani, N. Cherkashin, E. Lampin and A. Claverie,' Depth dependence of defect evolution and TED during annealing,' Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms., vol. 216, pp. 90-94, Feb. 2004 
  17. B. Colombeau, F. Cristiano, F. Olivie, C. Amand, G. Ben Assayag, and A. Claverie,'Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon,' Nuclear Instruments and Methods in Physics Research Section B: Interactions with Materials and Atoms., vol. 186, pp. 276-300, 2002 
  18. T. Kunikiyo, K. Mitsui, M. Fujinaga, T. Uchida, and N. Kotani,'Reverse short-channel effect due to lateral diffusion of point-defect induced by source/drain ion implantation,' IEEE Trans. on CAD., vol. 134 , p. 507-511, 1994 
  19. M. Takase, K. Yamashita, and B. Mizuno,'Study of Indium Doping Effect on High Performance Sub- Quarter Micron NMOS: Vt Control and Poket Implantation,' in Proc. SSDM, pp. 510-511, 1997 

이 논문을 인용한 문헌 (1)

  1. 2005. "" KIEE international transactions on electrophysics and applications, c5(2): 76~80 


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