[논문]Amorphization of Silicon by 250 keV Electron Irradiation and Hydrogen Annealing

Jo Jung-Yol

Amorphization of Silicon by 250 keV Electron Irradiation and Hydrogen Annealing 원문보기

KIEE international transactions on electrophysics and applications, v.5C no.1, 2005년, pp.23 - 27

Jo Jung-Yol (Department of Electronics Engineering, Ajou University)

Abstract ▼ AI-Helper

We observed that optical properties of silicon changed under high dose electron irradiation at 250 keV. Our experimental results revealed that the optical transmission through a silicon wafer is significantly increased by electron irradiation. Transmission increase by the change in the absorption coefficient is explained through an analogy with amorphous silicon. Moreover, solar cell open-circuit voltages indicated that defects were generated by electron irradiation, and that the defects responded to annealing. Our results demonstrated that the optical properties of silicon can be controlled by a combination of electron irradiation and hydrogen annealing.

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가설 설정

Defects made by proton irradiation have a narrow implantation profile of a few microns in width, so that the change in optical properties may not easily be observed. In this study, we illustrate that optical transmission and solar cell voltages of silicon can be changed subsequent to a high dose of electron irradiation.

제안 방법

Amorphous silicon is usually fabricated by plasma enhanced chemical vapor deposition (PECVD), or by ion implantation at high doses. In this paper we studied how the optical properties of crystalline silicon changed under high dose, 250 keV electron irradiation. We observed that optical transmission through the irradiated silicon wafer was increased, and we explicate this as a result of silicon lattice relaxation.

이론/모형

1) is likely due to changes in the optical properties in the upper part of the wafer, mostly affected by electron irradiation and H₂ annealing. The electron irradiation defect profile was calculated using the EDMULT program [10]. Calculations for 250 keV electrons indicate that the peak of defect density is located about 80 ㎛ from the surface, and that half of the maximum density is located at a depth of approximately 150 ㎛.
5 indicates the open circuit voltages (Voc) of irradiated silicon solar cells, measured under tungsten lamp illumination at a fixed power level. The solar cells consist of an n⁺p structure, fabricated on p- type polycrystalline silicon utilizing a ribbon type casting method. Electron irradiation was performed after metal contacts were fabricated.

참고문헌 (13)

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For example, S. J. Pearton, J. W. Corbett, M. Stavola, 'Hydrogen in Crystalline Semiconductors', Springer- Verlag, 1991
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J. Jo, H. J. Kim, Y. Nishihara, H. Suezawa, J. C. Lee, V. Soghomonian, and J. J. Heremans, 'Modification of silicon optical properties by 250 keV electron irradiation', Jpn. J. Appl. Phys., vol. 43, no. 4A, pp. 1237-1240, Apr. 2004

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