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電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.43 no.3 = no.345, 2006년, pp.9 - 14
호원준 (충남대학교 전자공학과) , 한인식 (충남대학교 전자공학과) , 이희덕 (충남대학교 전자공학과)
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The dependence of NBTI lifetime on the BEOL processes such as sintering gas type and passivation layer has been characterized in depth. Then, optimized BEOL process scheme is proposed to improve NBTI lifetime. NBTI showed degradation due to the plasma enhanced nitride (PE-SiN) passivation film and <...
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D.K. Schroder and J.A. Babcock, 'Negative bias temperature instability : Road to cross in deep submicron silicon semiconductor manufacturing', J. Appl, Phys., Vol. 94, No.1, p.1-18, July 2003
N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C.T. Liu, R.C. Keller and T. Horiuchi, 'NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-um gate CMOS generation', Symp. on VLSI Technology, p.92-93, 2000
E. Morifuji, T. Kumamori, M. Muta, K. Suzuki, M.S. Krishnan, T. Brozek, X. Li, W. Asano, M. Nishigori, N. Yanagiya, S. Yamada, K. Miyamoto, T. Noguchi and M. Kakumu, 'New guideline for hydrogen treatment in advanced system LSI', Symp. on VLSI Technology, p.218-219, 2002
A. Suzuki, K. Tabuchi, H. Kimura, T. Hasegawa and S. Kadomura, 'A strategy using a copper/low-k BEOL process to prevent negative-bias temperature instability(NBTI) in p-MOSFETs with ultra-thin gate oxide', Symp, on VLSI Technology, p.216-217, 2002
S. Wolf, 'Silicon Processing for the VLSI Era The submicron MOSFET', Vol. 3, Chap. 9, p.642-647, Lattice Press, Sunset Beach, CA, 1995
D.Y.C. Lie, J. Yota, W. Xia, A.B. Joshi, R.A. Williams, R. Zwingman, L. Chung and D.L. Kwong, 'New experimental findings on process-induced hot-carrier degradation of deep-submicron N-MOSFETs', Proc. Intl. Reliability Physics Symp., p.362-369, 1999
S. Chetlur, S. Sen, E. Harris, H. Vaidya, I. Kizilyalli, R. Gregor and B. Harding, 'Influence of passivation anneal position on metal coverage dependent mismatch and hot carrier reliability', Proceedings of 7th IPFA, p.21-24, 1999
F.-C. Hsu, J. Hui,and K. Y. Chiu, 'Effect of final annealing on hot-electron-induced MOSFET degradation', IEEE Electron Dev. Lett., Vol. 6, No.7, p.369-371, July 1985
J. Mitsuhashi, S. Nakao, T. Matsukawa, 'Mechanical stress and hydrogen effects on hot carrier injection', IEDM, p.386-389, 1986
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