$\require{mediawiki-texvc}$
  • 검색어에 아래의 연산자를 사용하시면 더 정확한 검색결과를 얻을 수 있습니다.
  • 검색연산자
검색연산자 기능 검색시 예
() 우선순위가 가장 높은 연산자 예1) (나노 (기계 | machine))
공백 두 개의 검색어(식)을 모두 포함하고 있는 문서 검색 예1) (나노 기계)
예2) 나노 장영실
| 두 개의 검색어(식) 중 하나 이상 포함하고 있는 문서 검색 예1) (줄기세포 | 면역)
예2) 줄기세포 | 장영실
! NOT 이후에 있는 검색어가 포함된 문서는 제외 예1) (황금 !백금)
예2) !image
* 검색어의 *란에 0개 이상의 임의의 문자가 포함된 문서 검색 예) semi*
"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"
쳇봇 이모티콘
안녕하세요!
ScienceON 챗봇입니다.
궁금한 것은 저에게 물어봐주세요.

논문 상세정보

Abstract

Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range $(1KeV{\sim}30MeV)$ than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.

참고문헌 (23)

  1. W.-C. Jung, 'I-V and C-V measurements of fabricated $P^{+}/N^{+}$ junction diode in antimony doped (111) silicon', Trans. EEM, Vol. 3, No. 2, p. 10, 2002 
  2. W.-C. Jung, 'A study of experiment and developed model by antimony high energy implantation in silicon', J. of KIEEME(in Korean), Vol. 17, No. 11, p. 1156, 2004 
  3. H. Ruecker, B. Henemann, R. Bath, D. Bolze, V. Melnik, D. Krueger, and R. Kurps, 'Formation of shallow source/drain extensions for metal-oxide-semiconductor field-effect', Vol. 82, No.5, p. 826, 2003 
  4. J. P. Biersack, 'Basic physical aspects of high energy implantation', Nucl. Inst. and Meth. B, Vol. 35, p. 205, 1988 
  5. J. F. Ziegler, 'Ion Implantation Science and Technology', Ion Implantation Technology Co., New Jersey, p. 125, 1996 
  6. J. F. Ziegler, 'The stopping of energetic light ions in elemental matter', J. Appl. Phys., Vol. 85, No.3, p. 1249, 1999 
  7. J. F. Ziegler, 'SRIM 2000 manual', http://www.srim.org 
  8. J. F. Ziegler, J. P. Biersack, and U. Littmark, 'The stopping and range of ions in matter', Vol. 1, New York: Pergamon Press, p. 45, 1985 
  9. K. M. Klein, C. Park, and A. F. Tasch, 'Ultra shallow junction formation in silicon using implantation', IEEE Trans. Electron Devices ED Vol. 39, p. 1614, 1992 
  10. A. F. Tasch and S. K. Banerjee, 'Ultra shallow junction formation in silicon using ion implantation', Nucl. Inst. and Meth. In Phys. B, Vol. 112, p. 177, 1996 
  11. R. Brindos, P. Keys, K. S. Jones, and M. E. Law, 'Effects of arsenic doping on {311} defect dissolution in silicon', Appl. Phys. Letters, Vol. 75, No.2, p. 229, 1999 
  12. H. Cerva, 'Two-dimensional delineation of shallow junctions in silicon by selective etching of transmission electron microscopy cross sections', J. Vac. Sci. Technol. B, Vol. 10, No.1, p. 491, 1992 
  13. K. D. Yoo, C. D. Marsh, and G. R. Booker, 'Two-dimensional dopant concentration profiles from ultra-shallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method', Appl. Phys. Letters, Vol. 80, No. 15, p. 2687, 2002 
  14. Synopsys Inc., 'http://www.synopsis.com', TCAD, Taurus TSUPREM4, 2006 
  15. J. D. Plummer, M. D. Deal, and P. B. Griffin, 'Silicon VLSI Technology', Prentice Hall, Inc., p. 451, 2000 
  16. R. B. Fair, 'The role transient damage annealing in shallow junction formation', Nucl. Instr. and Meth. B, Vol. 37/38, p. 371, 1989 
  17. R. C. Jaeger, 'Introduction to Microelectronic Fabrication', Prentice Hall, New Jersey, 2002 
  18. R. Smith, 'Atomic and Ion Collisions in Solids and at Surface', Cambridge University Press, 1997 
  19. H. H. Andersen and J. F. Ziegler, 'Hydrogen, stopping power and ranges in all elements', The Stopping and Ranges of Ions in Matter edited by J. F. Ziegler, Pergamon, New York, Vol. 6, p. 64, 1977 
  20. U. Littmark and J. F. Ziegler, 'Handbook of range distributions for energetics ions in all elements', The Stopping and Ranges of Ions in Matter edited by J. F. Ziegler, Pergamon, New York, Vol. 6, p. 45, 1980 
  21. W. C. Jung, 'A study of boron profiles by high energy ion implantation in silicon', J. of KIEEME (in Korean), Vol. 15, No.4, p. 289, 2002 
  22. R. P. Webb and E. Maydell, 'Comparisons of fast algorithms for calculation of range profiles in layered structures', Nucl. Inst. and Meth. B, Vol. 33 p. 117, 1988 
  23. M. A. gribelyuk, M. R. McCartney, J. Li, C. S. Murthy, P. Ronsheim, B. Doris, J. S. McMurray, S. Hegde, and d. J. Smith, 'Mapping of electrostatic potential in deep submicron CMOS devices by electron holography', Phy. Rev. Lett., Vol. 89, No. 2, p. 1, 2002 

이 논문을 인용한 문헌 (0)

  1. 이 논문을 인용한 문헌 없음

원문보기

원문 PDF 다운로드

  • ScienceON :

원문 URL 링크

원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다. (원문복사서비스 안내 바로 가기)

상세조회 0건 원문조회 0건

이 논문과 연관된 기능

DOI 인용 스타일