선택한 단어 수는 입니다.
최소 단어 이상 선택하여야 합니다.
최소 단어 이상 선택하여야 합니다.
선택한 단어 수는 30입니다.
최대 10 단어까지만 선택 가능합니다.
최대 10 단어까지만 선택 가능합니다.
제안 방법
- 8 nm and 233 nm, respectively. The developed model in this research showed an excellent simulation results as it also matched well with TEM data and TSUPREM们 From the different mask structures with different slope angles, the doping profiles determined with the developed model can be visualized and analyzed. The developed model for the implantation can be used in high energy as well as in low energy.
- 3. Two-dimensional TEM measurement and simulation of arsenic implanted silicon after annealing and chemical etching treatment(60,000x magnification).
- Two-dimensional arsenic and boron profiles in NMOS and PMOS devices for the doping of source and drain were demonstrated by chemical etching-method and with the use of verification through the SRIM, UT- MARLOWE simulation tools and developed model. The measured TEM data and simulation data are shown high correspondence.
대상 데이터
- 5 nm and 125 nm, respectively. The channel lengths with measured XTEM data and developed model were 199.4 nm and 205 nm, respectively. The TSUPREM4 data for the vertical depth and the channel length were determined to be 125.
- For the arsenic implanted silicon, the vertical depths with the developed model and XTEM data were 79 nm and 83 nm, respectively. The channel lengths with measured XTEM data and developed model were 237 nm and 259 nm, respectively. The TSUPREM4 data for the vertical depth and the channel length were determined to be 85.
이론/모형
- Two-dimensional distributions of implanted impurities were visualized by using chemical etching and electron h이ography[14-17j, and the developed model was compared with two- dimensional simulation data obtained using TSUPREM4 [18, 19]. In the simulation, all annealing processes were carried out using proper diffusion coefficients[20, 21 ] for the exact spreading diffusion effects. The output data of developed analytical model concurred with the measured TEM data after furnace annealing.
- 3. Sample preparations for the TEM measurements were carried out fast and easily using FIB (Focused Ion Beam) tool. For the experimental condition of the FIB, the beam current was 1-pA and the gallium ions as a source element were accelerated with 30-keV.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.