최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기센서학회지 = Journal of the Korean Sensors Society, v.16 no.4, 2007년, pp.313 - 318
박용욱 (남서울대학교 전자공학과) , 윤석진 (한국과학기술연구원 박막재료연구센터)
Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin
* AI 자동 식별 결과로 적합하지 않은 문장이 있을 수 있으니, 이용에 유의하시기 바랍니다.
S. Iijima, 'Helical microtubules of graphite carbon', nature, vol. 354, p. 56, 1991
S. Iijima and T. Ichihashi, 'Single shell carbon nanotubes of 1 nm diameter', nature, vol. 363, p. 603, 1993
S. J. Trans, A. R. M. Vershueren, and C. Dekker, 'Room-temperature transistor based on a single carbon nanotubr', nature, vol. 393, p. 49, 1998
R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, 'Single-and multi-wall carbon nanotube field-effect transistors', Appl. Phys. Lett., vol. 73, p. 2447, 1998
S. Fan, M. G Chapline, N. R. Franklin, T. W. Tombler, A. M. Cassell, and H. 1. Dai, 'Self-oriented regular arrays of carbon nanotubes and their field emission properties', science, vol. 238. p. 512, 1999
M. Dresselhaus, G. Dresselhaus, and P. Avouris, ?'Carbon nanotube synthrsis, properties, and applica tions', Springer-Verlag, Berlin, 2001
A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, 'Logic circuits with carbon nanotube transistors', science, vol. 294, p. 1317, 2001
Philip G. Collin, Michael S. Arnold, and P. Avouris, 'Engineering carbon naotubes and nanotube circuits using electrical breakdown', science, vol. 292, p. 706, 2001
S. J. Wind, J. Appenzeller, R. Martel, V. Dercke, and Ph. Avouris, 'Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes', Appl. Phys. Lett., vol 80, p. 3817, 2002
J. Appenzeller, J. Knoch, R. Martel, S. Wind, and Ph. Avouris, 'Field-modulated carrier transport in carbon nanotube transistors', Phys. Rev. Lett., vol. 89, no. 12, pp. 12608-1, 2002
S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appezeller, and Ph. Avouris, 'Carbon nanotubes as schottky barrier transistors', Phys. Rev. Lett., vol. 89, no. 10, pp. 106801-1,2002
S. Rosenblatt' Y. Yaish, J. W. Park, J. Gore, V. Sazonova, and P. L. Mceuen, 'High performance electrolyte gated carbon nanotube transistors', Nano Lett., vol. 2 no. 8, p. 869, 2002
V. Derycke, R. Martel, J. Appenzeller, and P. Aouris, 'Controlling doping and carrier injection in carbon nanotube transistors', Appl. Phys. Lett., vol. 80, p. 2773, 2002
A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. J. Dai, 'High performance n-Type carbon nanotube field- effect transistors with chemically doped contacts', Nano Lett., vol. 5, no. 2, p. 345, 2005
R. V. Seidel, A. P. Graham, J. Kretz, B. Rajasekharan, G. S. Duesberg, M. Liebau, E. Unger, F. Kreupl, and W. Hoenlein, 'Sub-20 nm short channel carbon nanotube transistors', Nano Lett., vol. 5, no. 1, p. 417, 2005
Le.onard, Franc.ois, Stewart, and Derek A, 'Properties of short channel ballistic carbon nanotube transistors with ohmic contacts', Nanotechnology, vol. 17, no. 18, p. 4699, 2006
D. Jimenez, X. Cartoixa, E. Miranda, J. Sune, F. Chaves, and S. A. Roche, 'Simple drain current model for schottky-barrier carbon nanotube field effect transistors', Nanotechnology, vol. 18, no. 2, p. 025201, 2007
R. T. Weitz, U. Zschieschang, F . Effenberger, H. Klauk, M. Burgh ard, and K. Kern, 'High-performance carbon nanotube field effect transis tors with a thin gate dielect ric based on a self-assembled monola yer', Nano lett., vol. 7, no. 1, p. 22, 2007.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
출판사/학술단체 등이 한시적으로 특별한 프로모션 또는 일정기간 경과 후 접근을 허용하여, 출판사/학술단체 등의 사이트에서 이용 가능한 논문
※ AI-Helper는 부적절한 답변을 할 수 있습니다.