A new level shifter using low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) for low-power applications is proposed. The proposed level shifter uses a capacitive-coupling effect and can reduce the power consumption owing to its no-short-circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output.
Shin-Hung Yeh, Wein-Town Sun, Jian-Shen Yu, Chien-Chih Chen, Jargon Lee, and Chien-Sheng Yang, in Tech. Dig. of SID (2005), p. 352.
Hiroyuki Ohshima and Marcel Fuhren, in Tech. Dig. of SID (2007), p. 1482.
Sang-Hoon Jung, Woo-Jin Nam, Chang-Wook Han, and Min-Koo Han, in Tech. Dig. of SID (2003), p. 1396.
Woo-Jin Nam, Sang-Hoon Jung, Jae-Hoon Lee, Hye-Jin Lee, and Min-Koo Han, in Tech. Dig. of SID (2005), p. 1046.
Hiroshi Haga, Yoshihiro Nonaka, Youichiro Kamon, Youich Kitagishi, Masayuki Jumonji, Kenichi Takatori and Hideki Asada, in Tech. Dig. of SID (2007), p. 1486.
Jan Doutreloigne, Herbert De Smet, Jean Van den Steen and Geert Van Doorselaer, in ICM (1999), p. 213.
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