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NTIS 바로가기Transactions on electrical and electronic materials, v.17 no.5, 2016년, pp.270 - 274
Charmi, Morteza (Department of Nano Physics, Malek-Ashtar University of Technology)
This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and ...
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