[논문]10-GHz Band Voltage Controlled Oscillator (VCO) MMIC for Motion Detecting Sensors

Kim, Sung-Chan; Kim, Yong-Hwan; Ryu, Keun-Kwan

doi:10.6109/jicce.2018.16.1.12

10-GHz Band Voltage Controlled Oscillator (VCO) MMIC for Motion Detecting Sensors 원문보기

Journal of information and communication convergence engineering, v.16 no.1, 2018년, pp.12 - 16

Kim, Sung-Chan (Department of Electronics and Control Engineering, Hanbat National University) , Kim, Yong-Hwan (RFIC) , Ryu, Keun-Kwan (Department of Electronics and Control Engineering, Hanbat National University)

Abstract ▼ AI-Helper

In this work, a voltage controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) was demonstrated for 10-GHz band motion detecting sensors. The VCO MMIC was fabricated using a $2-{\mu}m$ InGap/GaAs HBT process, and the tuning of the oscillation frequency is achieved by changing the internal capacitance in the HBT, instead of using extra varactor diodes. The implemented VCO MMIC has a micro size of $500{\mu}m{\times}500{\mu}m$, and demonstrates the value of inserting the VCO into a single chip transceiver. The experimental results showed that the frequency tuning characteristic was above 30 MHz, with the excellent output flatness characteristic of ${\pm}0.2dBm$ over the tuning bandwidth. And, the VCO MMIC exhibited a phase noise characteristic of -92.64 dBc/Hz and -118.28 dBc/Hz at the 100 kHz and 1 MHz offset frequencies from the carrier, respectively. The measured values were consistent with the design values, and exhibited good performance.

주제어

표/그림 (9)

그림 Fig. 1. Circuit schematics of the voltage controlled oscillator with LC
그림 Fig. 2. The internal equivalent circuit of the InGap/GaAs heterojunction
그림 Fig. 3. The simulation results for the voltage controlled oscillator using the
그림 Fig. 4. Harmonic suppression characteristics above 27 dBc for the
그림 Fig. 5. Output power characteristics of 5.59 dBm for the fabricated voltage
그림 Fig. 6. The characteristics of phase noise versus offset frequencies of the fabricated voltage controlled oscillator MMIC
그림 Fig. 7. Tuning frequency and output power versus tuning voltage of the
그림 Fig. 8. The fabricated voltage controlled oscillator MMIC with the size of 500
표 Table 1. Electrical performances of the proposed voltage controlledoscillator MMIC

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문제 정의

In this paper, we demonstrated the design of a VCO MMIC without a varactor diode for motion detecting sensors. The proposed device technology relies on a 2-μm InGap/GaAs HBT process.

대상 데이터

The VCO MMIC based on the 2-μm InGap/Gap HBT process was mounted on a TLY-5 PCB with a permittivity of 2.2, height of 0.51 mm and thickness of 0.5 oz, as provided by the Taconic Company for testing electrical performance.

성능/효과

The designed VCO MMIC was fabricated using a 2-μm InGap/GaAs Heterojunction Bipolar Transistor (HBT) process, and the measured electrical characteristics were found to be consistent with the design values, and exhibited good performance.
The obtained tuning frequency of the fabricated VCO MMIC was above 30 MHz, and the measured flatness of the output power showed excellent performance within ±0.2 dBm.

참고문헌 (8)

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원문보기 상세보기
S. K. Choi and J. Y. Ryu, "Design of voltage-controlled oscillator for automotive collision avoidance radar system-on-chip," Journal of Korean Institute of Information Technology, vol. 11, no. 10, pp. 1-6, 2013. DOI: 10.14801/kiitr.2013.11.10.1.

상세보기
G. S. Chae, "A low-noise transceiver design for 10GHz band motion sensor," Journal of Digital Convergence, vol. 10, no. 10, pp. 313-318, 2012.
Z. Q. Cheng, Y. Cai, J. Liu, Y. Zhou, K. M. Lau, and K. J. Chen, "A low phase-noise X-band MMIC VCO using high-linearity and lownoise composite-channel $Al_{0.3}Ga_{0.7}N/Al_{0.05}Ga_{0.95}N/GaN\;HEMTs$ ," IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 1, pp. 23-29, 2007. DOI: 10.1109/TMTT.2006.888942.

상세보기
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Advanced Wireless Semiconductor Company, "Design Manual InGap/GaAs HBT," Document No. FS-DM-415.01.
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