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ETRI journal, v.45 no.1, 2023년, pp.171 - 179
Byoung-Gue Min (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Jong-Min Lee (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Hyung Sup Yoon (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Woo-Jin Chang (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Jong-Yul Park (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Dong Min Kang (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Sung-Jae Chang (DMC Convergence Research Department, Electronics and Telecommunications Research Institute) , Hyun-Wook Jung (DMC Convergence Research Department, Electronics and Telecommunications Research Institute)
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We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a t...
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