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NTIS 바로가기ETRI journal, v.45 no.1, 2023년, pp.171 - 179
Byoung-Gue Min (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Jong-Min Lee (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Hyung Sup Yoon (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Woo-Jin Chang (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Jong-Yul Park (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Dong Min Kang (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Sung-Jae Chang (DMC Convergence Research Department, Electronics and Telecommunications Research Institute) , Hyun-Wook Jung (DMC Convergence Research Department, Electronics and Telecommunications Research Institute)
We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a t...
J. Kim and Y. Kwon, High performance millimeter-wave image?reject low noise amplifier using inter-stage tunable resonators,?ETRI J. 36 (2014), no. 3, 510-513.
D. Kang, J. Y. Hong, J. Y. Shim, J. H. Lee, H. S. Yoon, and?K. H. Lee, A 77 GHz mHEMT MMIC chip set for automotive?radar systems, ETRI J. 27 (2005), no. 2, 133-139.
J. Lee, W. J. Chang, D. M. Kang, B. G. Min, H. S. Yoon, S. J.?Chang, H. W. Jung, W. Kim, J. Jung, J. Kim, and M. Seo, Wband MMIC chipset in 0.1-μm mHEMT technology, ETRI J. 42?(2020), no. 4, 549-561.
J. Shim, H. S. Yoon, D. M. Kang, J. Y. Hong, and K. H. Lee,?DC and RF characteristics of 0.15 μm power metamorphic?HEMTs, ETRI J. 27 (2005), no. 6, 685-690.
D. Xu, T. Enoki, and Y. Ishii, The importance of?electrochemistry-related etching in the gate-groove fabrication?for InAlAs/InGaAs HFET's, IEEE Electrn. Device Lett. 19?(1998), no. 1, 10-12.
L. F. Lester, Smith PM, Ho P, Chao PC, Tiberio RC, Duh KH,?0.15-μm gate-length double recess pseudomorphic HEMT with?fmax of 350 GHz, (Digest Int. Electron Devices Meeting), 1988,?pp. 172-175.
D. Xu, H. Heiss, S. Kraus, M. Sexl, G. Bohm, G. Trankle,?G. Weimann, and G. Abstreiter, 0.15 [micro sign]m double?modulation doped InAs-inserted-channel MODFETs: Gate?recess for optimum RF performances, Electron. Lett. 33 (1997),?532-533.
M. Hagio, Electrode reaction of GaAs metal semiconductor field?effect transistors in deionized water, J. Electrochem Soc. 140?(1993), 2402-2405.
G. M. Metze, S. McPhilmy, and P. Laux, The effects of electrochemically-induced etching nonuniformities on microwave field?effect transistors, IEEE Electron. Device Lett. 16 (1995), 23-25.
Nitta Y, Ohshima T, Shigemasa R, Nishi S, Kimura T. Control?of electro-chemical etching for uniform 0.1-μm gate formation?of HEMT, (Digest Int. Electron Devices Meeting), 1996,?pp. 47-50.
T. Saranovac, D. C. Ruiz, D. Han, A. M. Arabhavi, O. Ostinelli,?and C. R. Bolognesi, Effects of electrochemical etching on InP?HEMT fabrication, IEEE Trans. Semi Manufac. 32 (2019),?no. 4, 496-501.
B. Min, S. J. Chang, H. W. Jung, H. S. Yoon, J. M. Lee, W. J.?Jang, and D. M. Kang, A study on the behavior of gate recess?etch by photoresist openings on Ohmic electrode in?InAlAs/InGaAs mHEMT devices, J. Korean Phys. Soc.?77 (2020), no. 2, 122-126.
H. Yoon, B. G. Min, J. M. Lee, D. M. Kang, H. K. Ahn, H. Kim,?and J. Lim, Microwave low-noise performance of 0.17 μm gatelength AlGaN/GaN HEMTs on SiC with wide head double-deck?T-shaped gate, IEEE Electron. Device Lett. 37 (2016), no. 11,?1407-1410.?
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