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2. Chem. Eng. Comm. T. S. Cale 119 197 1993 10.1080/00986449308936116 Cale, T. S., Park, J.-H., Gandy, T. H., Raupp, G. B. and Jain, M. K., “Step Coverage Predictions Using Combined Reactor Scale and Feature Scale Models for Blanket Tungsten LPCVD”,Chem. Eng. Comm.,119, 197(1993). 

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3. Cale, T. S., Park, J. H., Raupp, G. B., Jain, M. K. and Rogers, B. R., “The Inherently Transient Nature of Deposition Processes”, in Advanced Metallization for ULSI Applications, Rana, V. V. S., Joshi, R. V. and Ohdomari, I., eds., MRS, Pittsburg, p. 93 (1992a). 

4. Cale, T. S., Raupp, G. B., Park, J. H., Jain, M. K. and Rogers, B. R., “The Inherently Transient Nature of Deposition Processes”, in Proceedings of First International Conference of Transport Phenomena in Processing, Guceri, S., ed., Technomic Publishing Co., p. 127 (1992b). 

5. Mat. Res. Soc. Symp. Proc. T. S. Cale 224 171 1991 10.1557/PROC-224-171 Cale, T. S., Park, J. H., Raupp, G. B. and Jain, M. K.,“Impacts of Temperature and Reactant Flow Rate Transients on LPCVD Tungsten Silicide Film Properties”, in Rapid Thermal and Integrated Processing, Mat. Res. Soc. Symp. Proc., Vol.224, MRS, p. 171 (1991a). 

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6. J. Vac. Sci. Technol. T. S. Cale A9 3 524 1991 10.1116/1.577402 Cale, T. S., Gandy, T. H. and Raupp, G. B.,“A Fundamental Feature Scale Model for Low Pressure Deposition Processes”,J. Vac. Sci. Technol.,A9 (3), 524 (1991b). 

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7. J. Electrochem. Soc T. S. Cale 137 5 1526 1990 10.1149/1.2086706 Cale, T. S., Jain, M. K. and Raupp, G. B.,“Programmed Rate Processing to Increase Throughput in LPCVD”,J. Electrochem. Soc,137(5), 1526(1990). 

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8. J. Vac. Sci. Technol. T. S. Cale B8 6 1242 1990 10.1116/1.584901 Cale, T. S. and Raupp, G. B.,“A Unified Line-of Sight Model for Deposition in Rectangular Vias”,J. Vac. Sci. Technol.,B8(6), 1242 (1990). 

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9. Campbell, S. A., Knutson, K. L., Ahn, K. H., Leighton, J. D. and Liu, B.,“Gas Flow Patterns and Thermal Uniformity in Rapid Thermal Processing Equipment”, IEEE IEDM Technical Digest, p. 921 (1990). 

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11. J. Electrochem. Soc S. Chatterjee 139 12 3682 1992 10.1149/1.2069144 Chatterjee, S., Trachtenberg, I. and Edgar, T. F.,“Mathematical Modeling of a Single-Wafer Rapid Reactor”,J. Electrochem. Soc,139(12), 3682(1992). 

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12. J. Electrochem. Soc S. Chatterjee 137 1 328 1990 10.1149/1.2086413 Chatterjee, S. and McConica, C. M.,“Prediction of Step Coverage during Blanket CVD Tungsten Deposition in Cylinder Pores”,J. Electrochem. Soc,137(1), 328(1990). 

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18. J. Appl. Phys. M. M. IslamRaja 70 11 7137 1991 10.1063/1.349797 IslamRaja, M. M., Capelli, M. A., McVittie, J. P. and Saraswat, K. C., “A 3-Dimensional Model for Low Pressure Chemical Vapor Deposition Step Coverage in Trenches and Circular Vias”,J. Appl. Phys.,70(11), 7137(1991). 

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19. J. Electrochem. Soc. M. K. Jain 140 1 242 1993 10.1149/1.2056096 Jain, M. K., Cale, T. S. and Gandy, T. H.,“Comparison of LPCVD Film Conformalities Predicted by Ballistic Transport-Reaction and Continuum Diffusion-Reaction Models”,J. Electrochem. Soc. 140(1), 242(1993). 

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20. Jasinski, T. J. and Kang, S. S.,“Application of Numerical Modeling for CVD Simulation Test Case: Blanket Tungsten Deposition Uniformity”, Tungsten and Other Advanced Metals for ULSI Applications in 1990, Smith, G. C. and Blumenthal, R., eds., MRS, Pittsburg, p. 129 (1991). 

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22. J. Electrochem. Soc C. R. Kleijn 136 11 3423 1989 10.1149/1.2096465 Kleijn, C. R., van der Meer, Th. H. and Hoogendoorn, C. J.,“A Mathematical Model LPCVD in a Single Wafer Reactor”,J. Electrochem. Soc,136(11), 3423(1989). 

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23. J. Electrochem. Soc C. R. Kleijn 138 2 509 1991 10.1149/1.2085620 Kleijn, C. R., Hoogendoorn, C. J., Hasper, A., Holleman, J. and Middelhock, J.,“Transport Phenomena in Tungsten LPCVD in a Single-Wafer Reactor”,J. Electrochem. Soc,138(2), 509(1991). 

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24. J. Electrochem. Soc C. R. Kleijn 138 7 2190 1991 10.1149/1.2085948 Kleijn, C. R.,“A Mathematical Model of the Hydrodynamics and Gas-Phase Reactions in Silicon LPCVD in a Single-Wafer Reactor”,J. Electrochem. Soc,138(7), 2190(1991). 

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27. IEEE Trans. Electron Devices M. M. Moslehi ED-39 1 4 1992 10.1109/16.108208 Moslehi, M. M., Chapman, R. A., Wong, M., Paranjpe, A., Najm, H. N., Kuehne, J., Yeakley, R. L. and Davis, C.J.,“Single-Wafer Integrated Semiconductor Device Processing”, IEEE Trans. Electron Devices,ED-39(1), 4(1992). 

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28. Netlib Contains Many Source Codes Served by AT&T Bell Labs in Murray Hill, N.J., U.S.A. 

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30. J. Electrochem. Soc S.-K. Park 137 8 2624 1990 10.1149/1.2086999 Park, S.-K. and Economou, D. J.,“Numerical Simulation of a Single-Wafer Isothermal Plasma Etching Reactor”,J. Electrochem. Soc,137(8), 2624(1990). 

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31. Park, J.-H.,“Simulation of Low Pressure Chemical Vapor Deposition Using Combined Reactor Scale and Feature Scale Models”, Ph D. Dissertation, Arizona State University, U.S.A., 1992. 

32. Chemistry of Materials G. B. Raupp 1 207 1989 10.1021/cm00002a009 Raupp, G. B. and Cale, T. S.,“Step Coverage Prediction in Low-Pressure Chemical Vapor Deposition”,Chemistry of Materials,1, 207 (1989). 

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33. Thin Solid Films G. B. Raupp 193 234 1990 10.1016/S0040-6090(05)80032-X Raupp, G. B., Cale, T. S., Jain, M. K., Rogers, B. and Srinivas, D., “Step Coverage of Tungsten Silicide Films Deposited by Low Pressure Dichlorosilane Reduction of Tungsten Hexafluoride”,Thin Solid Films,193, 234 (1990). 

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36. Rode, E. J. and Schmitz, J. E. J.,“Study of Reactor Design by Computational Fluid Dynamics”, in Advanced Metallization for ULSI Applications, Rana, S., Joshi, R. V. and Ohdomari, I., eds., MRS, Pittsburg, p. 105 (1992). 

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