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NTIS 바로가기Solid-state electronics, v.44 no.10, 2000년, pp.1771 - 1781
Lee, J.C (Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA) , Hoque, A (Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA) , Croft, G.D (Department of Technology Development, Intersil Corporation, Melbourne, FL, USA) , Liou, J.J (Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA) , Young, R (Department of Technology Development, Intersil Corporation, Melbourne, FL, USA) , Bernier, J.C (Department of Reliability Engineering, Intersil Corporation, Melbourne, FL, USA)
AbstractElectrostatic discharge (ESD) is responsible for more than 25% of semiconductor device and chip damage each year. This paper focuses on an ESD event resulting from the charge being transferred from a human body to an integrated circuit (called the human body model, HBM). In particular, the s...
Diaz 1995 Modeling of electrical overstress in integrated circuits
IEEE Proc Vinson 86 399 1998 10.1109/5.659493 Electrostatic discharge in semiconductor devices: an overview
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Atlas Manual, Silvaco International, CA, 1996
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