AbstractA cantilever device with two gold coated silicon tips has been used to create two point contacts on a silicon surface. The lateral distance between the tips is 10μm. The tips are independently movable in vertical direction and the contact force is defined. While the contacts are closed, a complete set of electrical characteristics of the system is measured. An Ohmic current and a field dependent current are found, so the system behaves like a FET. The measured set of curves was fit with a MESFET model. A weak coupling between the bulk material and the current carried through surface states is found.
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