Indium tin oxide(ITO) used in many applications such as electronic and optical devices was deposited on soda-lime glass substrates from a mixture of 90 wt.% of In2O3 and 10 wt.% of SnO2 at several different substrate temperatures by using an electron beam evaporation technique. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis demonstrated that the films had a tendency to crystallize along the preferred orientation as the substrate temperature increases. The transmittance of the films increased with an increase in the substrate temperature. The transmittance of the films deposited at 200 ℃ was about 80 % in the visible light range. The deposited films were post-annealed for 10 minutes at 400 ℃ in an oxygen environment. The structural, electrical and optical properties of the ITO films were determined as a function of the substrate temperature. The films deposited at higher substrate temperatures showed strong diffraction peaks of preferred orientations. After the post-annealing process, crystallization was also detected in the films deposited at room temperature. Experimental results showed that the sheet resistance of the ITO films was lower after post-annealing. Atomic force microscopy (AFM) observation revealed that the surface roughness increased slightly as the crystallinity increased after post-annealing.
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