Zinc-oxide (ZnO) thin-film phosphors were prepared on silicon (100) substrates by using a spin-coating technique and were annealed at different temperatures in an air ambient. XRD patterns showed that all of the films were epitaxially grown with the -oriented hexagonal structures. The thickness was about 1 μm. The photoluminescent spectra of the thin-film phosphors were strongly affected by on the annealing temperature.
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