Nano-floating gate memory (NFGM) devices with ZnO nano-particles embedded in polyimide insulators were fabricated. The ZnO nano-particles were created by chemical reactions between polyamic acid and a zinc thin film. The size and the density of the ZnO nano-particles were about 10 nm and 2×1011 cm-2, respectively. The threshold voltage shift (ΔVT) of the NFGM with ZnO nano-particles was about 2.35 V at the initial stage of the programming and the erasing operations. The subthreshold characteristics and the output current characteristics show that the NFGM with ZnO nano-particles embedded in polyimide has possibility for high-performance non-volatile memory device applications.
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