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NTIS 바로가기表面科學 = Journal of the Surface Science Society of Japan, v.31 no.1, 2010년, pp.30 - 34
服部 健雄 (東北大学) , 廣瀬 (未来) , 和之 (科学)
This article summarizes recent progress and current scientific understanding of atomic and/or electronic structures of ultrathin SiO2 films and/or its interface with Si substrates in addition to the review of scientific achievements done in the past 30 years....
10.1109/T-ED.1976.18468 2) D. Kahng: IEEE Trans. Electron Devices ED-23, 655 (1976).
3) H. Sasaki Momose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura, M. Saito and H. Iwai: IEDM Tech. Dig. (1994) p. 593.
4) R. Chau: 2001 Silicon Nanoelectronics Workshop, Kyoto, Japan, p. 1.
10.1080/10408439508240718 5) T. Hattori: CRC Crit. Rev. Solid State Mater. Sci. 20, 339 (1995).
Kern, Werner. The Evolution of Silicon Wafer Cleaning Technology. Journal of the Electrochemical Society : JES, vol.137, no.6, 1887-1892.
Hasebe, Rui, Teramoto, Akinobu, Kuroda, Rihito, Suwa, Tomoyuki, Sugawa, Shigetoshi, Ohmi, Tadahiro. Three-Step Room-Temperature Cleaning of Bare Silicon Surface for Radical-Reaction-Based Semiconductor Manufacturing. Journal of the Electrochemical Society : JES, vol.156, no.1, H10-.
Ishizaka, Akitoshi, Shiraki, Yasuhiro. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE. Journal of the Electrochemical Society : JES, vol.133, no.4, 666-671.
10.1016/S0039-6028(01)01896-9 9) Y.J. Chabal and K. Raghavachari: Surf. Sci. 502, 41 (2002).
Bender, H., Verhaverbeke, S., Caymax, M., Vatel, O., Heyns, M. M.. Surface reconstruction of hydrogen annealed (100) silicon. Journal of applied physics, vol.75, no.2, 1207-1209.
Sakuraba, Masao, Murota, Junichi, Ono, Shoichi. Stability of the dimer structure formed on Si(100) by ultraclean low-pressure chemical-vapor deposition. Journal of applied physics, vol.75, no.7, 3701-3703.
Kuroda, R., Suwa, T., Teramoto, A., Hasebe, R., Sugawa, S., Ohmi, T.. Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs. IEEE transactions on electron devices, vol.56, no.2, 291-298.
Ohmi, T., Morita, M., Teramoto, A., Makihara, K., Tseng, K. S.. Very thin oxide film on a silicon surface by ultraclean oxidation. Applied physics letters, vol.60, no.17, 2126-2128.
Ikeda, H., Hotta, K., Yamada, T., Zaima, S., Iwano, H., Yasuda, Y.. Oxidation of H-terminated Si(100) surfaces studied by high-resolution electron energy loss spectroscopy. Journal of applied physics, vol.77, no.10, 5125-5129.
0369-8009 UDA TSUYOSHI 66 11 1199 1997
10.1016/S0169-4332(96)00165-1 16) T. Hattori, T. Aiba, E. Iijima, Y. Okube, H. Nohira, N. Tate and M. Katayama: Appl. Surf. Sci. 104/105, 323 (1996).
10.1016/0039-6028(73)90171-4 17) H. Ibach, K. Horn, R. Dorn and H. Luth: Surf. Sci. 38, 433 (1973).
Lyo, In Whan., Avouris, P., Schubert, B., Hoffmann, R.. Elucidation of the initial stages of the oxidation of silicon (111) using scanning tunneling microscopy and spectroscopy. The Journal of physical chemistry, vol.94, no.11, 4400-4403.
Kageshima, Hiroyuki, Shiraishi, Kenji.
First-Principles Study of Oxide Growth on Si(100) Surfaces and at
Nakajima, Kaoru, Okazaki, Yasutaka, Kimura, Kenji. Initial oxidation process on Si(001) studied by high-resolution Rutherford backscattering spectroscopy. Physical review. B, Condensed matter and materials physics, vol.63, no.11, 113314-.
Ross, Frances M., Gibson, J. Murray. Dynamic observations of interface propagation during silicon oxidation. Physical review letters, vol.68, no.11, 1782-1785.
Watanabe, Heiji, Kato, Koichi, Uda, Tsuyoshi, Fujita, Ken, Ichikawa, Masakazu, Kawamura, Takaaki, Terakura, Kiyoyuki. Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces. Physical review letters, vol.80, no.2, 345-348.
Hattori, Takeo, Nohira, Hiroshi, Takahashi, Kensuke. The initial growth steps of ultrathin gate oxides. Microelectronic engineering, vol.48, no.1, 17-24.
Kazuaki Ohishi, Takeo Hattori. Periodic Changes in SiO2/Si(111) Interface Structures with Progress of Thermal Oxidation. Japanese journal of applied physics. Part 2, Letters, vol.33, no.a5, L675-.
安田 哲二. 反射率差振動を利用したシリコン酸化層数のその場計測. 表面科學 = Journal of the Surface Science Society of Japan, vol.23, no.9, 562-567.
Rossi, Massimiliano, Mun, Bongjin S., Enta, Yoshiharu, Fadley, Charles S., Lee, Ki-Suk, Kim, Sang-Koog, Shin, Hyun-Joon, Hussain, Zahid, Ross Jr., Philip N.. In situ observation of wet oxidation kinetics on Si(100) via ambient pressure x-ray photoemission spectroscopy. Journal of applied physics, vol.103, no.4, 044104-.
Gusev, E. P., Lu, H. C., Gustafsson, T., Garfunkel, E.. Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering. Physical review. B, Condensed matter, vol.52, no.3, 1759-1775.
Walkup, R. E., Raider, S. I.. Insitu measurements of SiO(g) production during dry oxidation of crystalline silicon. Applied physics letters, vol.53, no.10, 888-890.
10.1016/S0169-4332(97)80068-2 31) Y. Takakuwa, M. Nihei and N. Miyamoto: Appl. Surf. Sci. 117/118, 141 (1997).
Hattori, Takeo, Suzuki, Toshihisa. Si-SiO2 interface structures on Si(100), (111), and (110) surfaces. Applied physics letters, vol.43, no.5, 470-472.
Himpsel, F. J., McFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, J. A., Hollinger, G.. Microscopic structure of theSiO2/Si interface. Physical review. B, Condensed matter, vol.38, no.9, 6084-6096.
Aiba, Takeshi, Yamauchi, Ken, Shimizu, Yuichi, Tate, Naoto, Katayama, Masatake, Hattori, Takeo. Initial Stage of Oxidation of Hydrogen-Terminated Si(100)-2× 1 Surface. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.34, no.b2, 707-711.
Pasquarello, Alfredo, Hybertsen, Mark S., Car, Roberto. Theory of Si 2pcore-level shifts at the Si(001)-SiO2interface. Physical review. B, Condensed matter, vol.53, no.16, 10942-10950.
Yamasaki, Takahiro, Kaneta, Chioko, Uchiyama, Toshihiro, Uda, Tsuyoshi, Terakura, Kiyoyuki. Geometric and electronic structures ofSiO2/Si(001)interfaces. Physical review. B, Condensed matter and materials physics, vol.63, no.11, 115314-.
Haight, R., Feldman, L. C.. Atomic structure at the (111) Si-SiO2 interface. Journal of applied physics, vol.53, no.7, 4884-4887.
Bongiorno, Angelo, Pasquarello, Alfredo, Hybertsen, Mark S., Feldman, L. C..
Transition Structure at the
Dreiner, S., Schürmann, M., Westphal, C., Zacharias, H..
Local Atomic Environment of Si Suboxides at the
40) S. Dreiner, M. Schürmann and C. Westphal: Phys. Rev. Lett. 93, 126101 (2004).
Pasquarello, Alfredo, Hybertsen, Mark S., Car, Roberto. Interface structure between silicon and its oxide by first-principles molecular dynamics. Nature, vol.396, no.6706, 58-60.
10.1016/0169-4332(96)00302-9 42) Y. Sugita, S. Watanabe, N. Awaji and S. Komiya: Appl. Surf. Sci. 100/101, 268 (1996).
Kosowsky, S. D., Pershan, P. S., Krisch, K. S., Bevk, J., Green, M. L., Brasen, D., Feldman, L. C., Roy, P. K.. Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. Applied physics letters, vol.70, no.23, 3119-3121.
Moreau, P., Brun, N., Walsh, C. A., Colliex, C., Howie, A..
Relativistic effects in electron-energy-loss-spectroscopy observations of the
Muller, D. A., Sorsch, T., Moccio, S., Baumann, F. H., Evans-Lutterodt, K., Timp, G.. The electronic structure at the atomic scale of ultrathin gate oxides. Nature, vol.399, no.6738, 758-761.
Ikegami, Hiroshi, Ohmori, Kenji, Ikeda, Hiroya, Iwano, Hirotaka, Zaima, Shigeaki, Yasuda, Yukio. Oxide Formation on Si(100)-2× 1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.35, no.b2, 1593-1597.
10.1103/PhysRevB.64.155325 47) K. Hirose, K. Sakano, H. Nohira and T. Hattori: Phys. Rev. B 64, 155325 (2001).
48) T. Hattori: “Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices”, NATO ASI Series, ed. by E. Garfunkel, E. Gusev and A. Vul' (Kluwer, Dordrecht, The Netherlands, 1998) p. 241.
10.1016/S0169-4332(97)80063-3 49) H. Nohira and T. Hattori: Appl. Surf. Sci. 117/118, 119 (1997).
10.1016/S0169-4332(97)00568-0 50) H. Nohira, A. Omura, M. Katayama and T. Hattori: Appl. Surf. Sci. 123/124, 546 (1998).
Hirose, K., Nohira, H., Koike, T., Sakano, K., Hattori, T.. Structural transition layer atSiO2/Siinterfaces. Physical review. B, Condensed matter and materials physics, vol.59, no.8, 5617-5621.
10.1103/PhysRevB.21.5733 52) R.B. Laughlin, J.D. Joannopoulos and D.J. Chadi: Phys. Rev. B 21, 5733 (1980).
Umeda, Takahide, Nishizawa, Masayasu, Yasuda, Tetsuji, Isoya, Junichi, Yamasaki, Satoshi, Tanaka, Kazunobu.
Electron Spin Resonance Observation of the Si(111)-
54) K. Hirose: to be published in J. Elec. Spectrosc. Relat. Phenom. (2010).
10.1143/APEX.2.071404 55) C.H. Lee, T. Tabata, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi: Appl. Phys. Express 2, 071404 (2009).
Terada, Naozumi, Haga, Takashi, Miyata, Noriyuki, Moriki, Kazunori, Fujisawa, Masami, Morita, Mizuho, Ohmi, Tadahiro, Hattori, Takeo. Optical absorption in ultrathin silicon oxide films near theSiO2/Si interface. Physical review. B, Condensed matter, vol.46, no.4, 2312-2318.
10.1103/PhysRevB.67.195313 57) K. Hirose, H. Kitahara and T. Hattori: Phys. Rev. B 67, 195313 (2003).
Giustino, Feliciano, Pasquarello, Alfredo. Electronic and dielectric properties of a suboxide interlayer at the silicon–oxide interface in MOS devices. Surface science, vol.586, no.1, 183-191.
Hirose, K., Nohira, H., Azuma, K., Hattori, T.. Photoelectron spectroscopy studies of SiO2/Si interfaces. Progress in surface science, vol.82, no.1, 3-54.
10.1063/1.2361177 60) K. Hirose, M. Kihara, D. Kobayashi, H. Okamoto, S. Shinagawa, H. Nohira, E. Ikenaga, M. Higuchi, A. Teramoto, S. Sugawa, T. Ohmi and T. Hattori: Appl. Phys. Lett. 89, 154103 (2006).
0018-8646 LUDEKE R 44 4 517 2000 10.1147/rd.444.0517
0919-2697 SEKO AKIYOSHI 28 3 163 2006
Rochet, F., Rigo, S., Froment, M., d'Anterroches, C., Maillot, C., Roulet, H., Dufour, G.. The thermal oxidation of silicon the special case of the growth of very thin films. Advances in physics, vol.35, no.3, 237-274.
Stefanov, Boris B., Gurevich, Alejandra B., Weldon, Marcus K., Raghavachari, Krishnan, Chabal, Yves. J.. Silicon Epoxide: Unexpected Intermediate during Silicon Oxide Formation. Physical review letters, vol.81, no.18, 3908-3911.
Tanemura, Tetsuo, Sato, Seiichi, Kundu, Manisha, Yamada, Chikashi, Murata, Yoshitada. Growth of single-crystal SiO2 clusters on Si(001) surface. Journal of applied physics, vol.105, no.7, 074310-.
10.1016/S0167-9317(99)00332-9 66) T. Fuyuki, S. Muranaka and H. Matsunami: Microelectron. Eng. 48, 35 (1999).
Itoh, H., Nagamine, M., Satake, H., Toriumi, A..
A study of atomically-flat SiO
Ueno, Tomo, Morioka, Ayuka, Chikamura, Shingo, Iwasaki, Yoshitaka. Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates. Japanese journal of applied physics. Part 2, Letters, vol.39, no.b4, L327-.
Sekine, K., Saito, Y., Hirayama, M., Ohmi, T.. Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma. IEEE transactions on electron devices, vol.48, no.8, 1550-1555.
Bustarret, E., Marcenat, C., Achatz, P., Kačmarčik, J., Lévy, F., Huxley, A., Ortéga, L., Bourgeois, E., Blase, X., Débarre, D., Boulmer, J.. Superconductivity in doped cubic silicon. Nature, vol.444, no.7118, 465-468.
71) S.J. Pennycook, K. van Benthem, A.G. Marinopoulos and S.T. Pantelides: Ext. Abstr. SSDM, Sendai (2009) p. 36.
山下 良之, 山本 達, 向井 孝三, 吉信 淳, 原田 慈久, 徳島 高, 高田 恭孝, 辛 埴, 赤木 和人, 常行 真司. 軟X線吸収発光分光法によるSiO2/Si界面電子状態のサイト選択的観測. 表面科學 = Journal of the Surface Science Society of Japan, vol.26, no.9, 514-517.
Journal of the Vacuum Society of Japan 51 749 2008 10.3131/jvsj2.51.749
74) L.C. Feldman: “Fundamental Aspects of Silicon Oxidation”, ed. by Y.J. Chabal (Springer-Verlag, Berlin, 2001) p. 1.
Meindl, J.D.. Low power microelectronics: retrospect and prospect. Proceedings of the IEEE, vol.83, no.4, 619-635.
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