$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Effects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET

IEEE transactions on electron devices, v.64 no.2, 2017년, pp.579 - 586  

Luo, Sheng ,  Lam, Kai-Tak ,  Wang, Baokai ,  Hsu, Chuang-Han ,  Huang, Wen ,  Yao, Liang-Zi ,  Bansil, Arun ,  Lin, Hsin ,  Liang, Gengchiau

Abstract AI-Helper 아이콘AI-Helper

Black phosphorus (BP) has been proposed as the channel material in the next generation ultrascaled CMOS devices. In order to gain insight into the current characteristics in 2-D layered materials, the current distribution of a few-layer BP Schottky barrier FET is investigated via state-of-the-art qu...

참고문헌 (54)

  1. Kresse, G., Joubert, D.. From ultrasoft pseudopotentials to the projector augmented-wave method. Physical review. B, Condensed matter and materials physics, vol.59, no.3, 1758-1775.

  2. Kohn, W., Sham, L. J.. Self-Consistent Equations Including Exchange and Correlation Effects. Physical review, vol.140, no.4, A1133-A1138.

  3. Electronic Transport in Mesoscopic Systems 1997 

  4. IEEE Electron Device Lett A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel lam 2010 10.1109/LED.2010.2045339 31 555 

  5. 10.1109/IEDM.2015.7409681 

  6. Kain Lu Low, Wen Huang, Yee-Chia Yeo, Gengchiau Liang. Ballistic Transport Performance of Silicane and Germanane Transistors. IEEE transactions on electron devices, vol.61, no.5, 1590-1598.

  7. IEEE Trans Electron Devices Band structure effects in extremely scaled silicon nanowire MOSFETs with different cross section shapes yawei 2015 10.1109/TED.2015.2475176 62 3547 

  8. Phys Rev B First-principles quantum transport with electron-vibration interactions: A maximally localized Wannier functions approach sejoong 2013 10.1103/PhysRevB.87.245407 87 245407 

  9. Strange, M., Kristensen, I. S., Thygesen, K. S., Jacobsen, K. W.. Benchmark density functional theory calculations for nanoscale conductance. The Journal of chemical physics, vol.128, no.11, 114714-.

  10. Szabó, Áron, Rhyner, Reto, Luisier, Mathieu. Ab initiosimulation of single- and few-layerMoS2transistors: Effect of electron-phonon scattering. Physical review. B, Condensed matter and materials physics, vol.92, no.3, 035435-.

  11. Guo, Yao, Han, Yuxiang, Li, Jiapeng, Xiang, An, Wei, Xianlong, Gao, Song, Chen, Qing. Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals. ACS nano, vol.8, no.8, 7771-7779.

  12. Das, Saptarshi, Appenzeller, Joerg. Where Does the Current Flow in Two-Dimensional Layered Systems?. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.13, no.7, 3396-3402.

  13. Das, Saptarshi, Chen, Hong-Yan, Penumatcha, Ashish Verma, Appenzeller, Joerg. High Performance Multilayer MoS2 Transistors with Scandium Contacts. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.13, no.1, 100-105.

  14. Bhimanapati, Ganesh R., Lin, Zhong, Meunier, Vincent, Jung, Yeonwoong, Cha, Judy, Das, Saptarshi, Xiao, Di, Son, Youngwoo, Strano, Michael S., Cooper, Valentino R., Liang, Liangbo, Louie, Steven G., Ringe, Emilie, Zhou, Wu, Kim, Steve S., Naik, Rajesh R., Sumpter, Bobby G., Terrones, Humberto, Xia, Fengnian, Wang, Yeliang, Zhu, Jun, Akinwande, Deji, Alem, Nasim, Schuller, Jon A., Schaak, Raymond E., Terrones, Mauricio, Robinson, Joshua A.. Recent Advances in Two-Dimensional Materials beyond Graphene. ACS nano, vol.9, no.12, 11509-11539.

  15. IEDM Tech Dig Progress in digital integrated electronics moore 1975 11 

  16. Luo, Xin, Lu, Xin, Koon, Gavin Kok Wai, Castro Neto, Antonio H., Özyilmaz, Barbaros, Xiong, Qihua, Quek, Su Ying. Large Frequency Change with Thickness in Interlayer Breathing ModeSignificant Interlayer Interactions in Few Layer Black Phosphorus. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.15, no.6, 3931-3938.

  17. Chu, Tao, Chen, Zhihong. Understanding the Electrical Impact of Edge Contacts in Few-Layer Graphene. ACS nano, vol.8, no.4, 3584-3589.

  18. Allain, Adrien, Kang, Jiahao, Banerjee, Kaustav, Kis, Andras. Electrical contacts to two-dimensional semiconductors. Nature materials, vol.14, no.12, 1195-1205.

  19. Kang, Jiahao, Liu, Wei, Sarkar, Deblina, Jena, Debdeep, Banerjee, Kaustav. Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors. Physical review. X, vol.4, no.3,

  20. Interlayer breathing and shear modes in few-layer black phosphorus jiang 2014 

  21. Gan, Li-Yong, Zhao, Yu-Jun, Huang, Dan, Schwingenschlögl, Udo. First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2(Y=Fand OH) all-2D semiconductor/metal contacts. Physical review. B, Condensed matter and materials physics, vol.87, no.24, 245307-.

  22. 10.1109/IEDM.2012.6479060 

  23. Tran, Vy, Soklaski, Ryan, Liang, Yufeng, Yang, Li. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Physical review. B, Condensed matter and materials physics, vol.89, no.23, 235319-.

  24. Doganov, Rostislav A., O’Farrell, Eoin C. T., Koenig, Steven P., Yeo, Yuting, Ziletti, Angelo, Carvalho, Alexandra, Campbell, David K., Coker, David F., Watanabe, Kenji, Taniguchi, Takashi, Neto, Antonio H. Castro, Özyilmaz, Barbaros. Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere. Nature communications, vol.6, 6647-.

  25. Wang, Q., Tao, X., Yang, L., Gu, Y.. Current crowding in two-dimensional black-phosphorus field-effect transistors. Applied physics letters, vol.108, no.10, 103109-.

  26. Wang, Jing, Polizzi, Eric, Ghosh, Avik, Datta, Supriyo, Lundstrom, Mark. Theoretical investigation of surface roughness scattering in silicon nanowire transistors. Applied physics letters, vol.87, no.4, 043101-.

  27. Li, Jia, Ma, T.-P.. Scattering of silicon inversion layer electrons by metal/oxide interface roughness. Journal of applied physics, vol.62, no.10, 4212-4215.

  28. Perello, David J., Chae, Sang Hoon, Song, Seunghyun, Lee, Young Hee. High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering. Nature communications, vol.6, 7809-.

  29. Kain Lu Low, Yee-Chia Yeo, Gengchiau Liang. Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials. IEEE transactions on electron devices, vol.63, no.2, 773-780.

  30. Kresse, G., Furthmüller, J.. Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set. Physical review. B, Condensed matter, vol.54, no.16, 11169-11186.

  31. J Appl Phys Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs demin 2016 10.1063/1.4953256 119 214312 

  32. Wan, Runlai, Cao, Xi, Guo, Jing. Simulation of phosphorene Schottky-barrier transistors. Applied physics letters, vol.105, no.16, 163511-.

  33. Du, Yuchen, Liu, Han, Deng, Yexin, Ye, Peide D.. Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling. ACS nano, vol.8, no.10, 10035-10042.

  34. IEEE Electron Device Lett Performance limits projection of black phosphorous field-effect transistors lam 2014 10.1109/LED.2014.2333368 35 963 

  35. Du, Haiwei, Lin, Xi, Xu, Zhemi, Chu, Dewei. Recent developments in black phosphorus transistors. Journal of materials chemistry. C, Materials for optical and electronic devices, vol.3, no.34, 8760-8775.

  36. Radisavljevic, Branimir, Kis, Andras. Mobility engineering and a metal–insulator transition in monolayer MoS2. Nature materials, vol.12, no.9, 815-820.

  37. Lee, Eduardo J. H., Balasubramanian, Kannan, Weitz, Ralf Thomas, Burghard, Marko, Kern, Klaus. Contact and edge effects in graphene devices. Nature nanotechnology, vol.3, no.8, 486-490.

  38. Hu, Zhi-Xin, Kong, Xianghua, Qiao, Jingsi, Normand, Bruce, Ji, Wei. Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus. Nanoscale, vol.8, no.5, 2740-2750.

  39. Fiori, Gianluca, Bonaccorso, Francesco, Iannaccone, Giuseppe, Palacios, Tomás, Neumaier, Daniel, Seabaugh, Alan, Banerjee, Sanjay K., Colombo, Luigi. Electronics based on two-dimensional materials. Nature nanotechnology, vol.9, no.10, 768-779.

  40. Zhang, Hua. Ultrathin Two-Dimensional Nanomaterials. ACS nano, vol.9, no.10, 9451-9469.

  41. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A.. Single-layer MoS2 transistors. Nature nanotechnology, vol.6, no.3, 147-150.

  42. Schwierz, F., Pezoldt, J., Granzner, R.. Two-dimensional materials and their prospects in transistor electronics. Nanoscale, vol.7, no.18, 8261-8283.

  43. Das, Saptarshi, Robinson, Joshua A., Dubey, Madan, Terrones, Humberto, Terrones, Mauricio. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids. Annual review of materials research, vol.45, 1-27.

  44. Proc VLSI Technol Symp High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 $\text{k}\Omega \mu \text{m}$ ) and record high drain current ( $460~\mu \text{A}/\mu \text{m}$ ) yang 2014 1 

  45. Demin Yin, Gyuchull Han, Youngki Yoon. Scaling Limit of Bilayer Phosphorene FETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.36, no.9, 978-980.

  46. Li, Likai, Yu, Yijun, Ye, Guo Jun, Ge, Qingqin, Ou, Xuedong, Wu, Hua, Feng, Donglai, Chen, Xian Hui, Zhang, Yuanbo. Black phosphorus field-effect transistors. Nature nanotechnology, vol.9, no.5, 372-377.

  47. J Appl Phys First principles study of metal contacts to monolayer black phosphorous anuja 2014 10.1063/1.4901998 116 204302 

  48. 10.1017/CBO9781139164313 

  49. Anantram, M. P., Lundstrom, Mark S., Nikonov, Dmitri E.. Modeling of Nanoscale Devices. Proceedings of the IEEE, vol.96, no.9, 1511-1550.

  50. Ramchandani, M G. Energy band structure of gold. Journal of physics. C, Solid state physics, vol.3, no.no.suppl1, S1-S9.

  51. Heyd, Jochen, Scuseria, Gustavo E.. Efficient hybrid density functional calculations in solids: Assessment of the Heyd-Scuseria-Ernzerhof screened Coulomb hybrid functional. The Journal of chemical physics, vol.121, no.3, 1187-1192.

  52. Heyd, Jochen, Scuseria, Gustavo E., Ernzerhof, Matthias. Hybrid functionals based on a screened Coulomb potential. The Journal of chemical physics, vol.118, no.18, 8207-8215.

  53. International Technology Roadmap for Semiconductor 2016 

  54. Comput Phys Commun wannier90: A tool for obtaining maximally-localised Wannier functions mostofi 2014 10.1016/j.cpc.2014.05.003 185 685 

관련 콘텐츠

오픈액세스(OA) 유형

GOLD(Hybrid)

저자가 APC(Article Processing Charge)를 지불한 논문에 한하여 자유로운 이용이 가능한, hybrid 저널에 출판된 논문

섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트