최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기IEEE transactions on electron devices, v.64 no.2, 2017년, pp.579 - 586
Luo, Sheng , Lam, Kai-Tak , Wang, Baokai , Hsu, Chuang-Han , Huang, Wen , Yao, Liang-Zi , Bansil, Arun , Lin, Hsin , Liang, Gengchiau
Black phosphorus (BP) has been proposed as the channel material in the next generation ultrascaled CMOS devices. In order to gain insight into the current characteristics in 2-D layered materials, the current distribution of a few-layer BP Schottky barrier FET is investigated via state-of-the-art qu...
Kresse, G., Joubert, D.. From ultrasoft pseudopotentials to the projector augmented-wave method. Physical review. B, Condensed matter and materials physics, vol.59, no.3, 1758-1775.
Kohn, W., Sham, L. J.. Self-Consistent Equations Including Exchange and Correlation Effects. Physical review, vol.140, no.4, A1133-A1138.
Electronic Transport in Mesoscopic Systems 1997
IEEE Electron Device Lett A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel lam 2010 10.1109/LED.2010.2045339 31 555
Kain Lu Low, Wen Huang, Yee-Chia Yeo, Gengchiau Liang. Ballistic Transport Performance of Silicane and Germanane Transistors. IEEE transactions on electron devices, vol.61, no.5, 1590-1598.
IEEE Trans Electron Devices Band structure effects in extremely scaled silicon nanowire MOSFETs with different cross section shapes yawei 2015 10.1109/TED.2015.2475176 62 3547
Phys Rev B First-principles quantum transport with electron-vibration interactions: A maximally localized Wannier functions approach sejoong 2013 10.1103/PhysRevB.87.245407 87 245407
Strange, M., Kristensen, I. S., Thygesen, K. S., Jacobsen, K. W.. Benchmark density functional theory calculations for nanoscale conductance. The Journal of chemical physics, vol.128, no.11, 114714-.
Szabó, Áron, Rhyner, Reto, Luisier, Mathieu. Ab initiosimulation of single- and few-layerMoS2transistors: Effect of electron-phonon scattering. Physical review. B, Condensed matter and materials physics, vol.92, no.3, 035435-.
Guo, Yao, Han, Yuxiang, Li, Jiapeng, Xiang, An, Wei, Xianlong, Gao, Song, Chen, Qing. Study on the Resistance Distribution at the Contact between Molybdenum Disulfide and Metals. ACS nano, vol.8, no.8, 7771-7779.
Das, Saptarshi, Appenzeller, Joerg. Where Does the Current Flow in Two-Dimensional Layered Systems?. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.13, no.7, 3396-3402.
Das, Saptarshi, Chen, Hong-Yan, Penumatcha, Ashish Verma, Appenzeller, Joerg. High Performance Multilayer MoS2 Transistors with Scandium Contacts. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.13, no.1, 100-105.
Bhimanapati, Ganesh R., Lin, Zhong, Meunier, Vincent, Jung, Yeonwoong, Cha, Judy, Das, Saptarshi, Xiao, Di, Son, Youngwoo, Strano, Michael S., Cooper, Valentino R., Liang, Liangbo, Louie, Steven G., Ringe, Emilie, Zhou, Wu, Kim, Steve S., Naik, Rajesh R., Sumpter, Bobby G., Terrones, Humberto, Xia, Fengnian, Wang, Yeliang, Zhu, Jun, Akinwande, Deji, Alem, Nasim, Schuller, Jon A., Schaak, Raymond E., Terrones, Mauricio, Robinson, Joshua A.. Recent Advances in Two-Dimensional Materials beyond Graphene. ACS nano, vol.9, no.12, 11509-11539.
IEDM Tech Dig Progress in digital integrated electronics moore 1975 11
Luo, Xin, Lu, Xin, Koon, Gavin Kok Wai, Castro Neto, Antonio H., Özyilmaz, Barbaros, Xiong, Qihua, Quek, Su Ying. Large Frequency Change with Thickness in Interlayer Breathing ModeSignificant Interlayer Interactions in Few Layer Black Phosphorus. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.15, no.6, 3931-3938.
Chu, Tao, Chen, Zhihong. Understanding the Electrical Impact of Edge Contacts in Few-Layer Graphene. ACS nano, vol.8, no.4, 3584-3589.
Allain, Adrien, Kang, Jiahao, Banerjee, Kaustav, Kis, Andras. Electrical contacts to two-dimensional semiconductors. Nature materials, vol.14, no.12, 1195-1205.
Kang, Jiahao, Liu, Wei, Sarkar, Deblina, Jena, Debdeep, Banerjee, Kaustav. Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors. Physical review. X, vol.4, no.3,
Interlayer breathing and shear modes in few-layer black phosphorus jiang 2014
Gan, Li-Yong, Zhao, Yu-Jun, Huang, Dan, Schwingenschlögl, Udo. First-principles analysis of MoS2/Ti2C and MoS2/Ti2CY2(Y=Fand OH) all-2D semiconductor/metal contacts. Physical review. B, Condensed matter and materials physics, vol.87, no.24, 245307-.
Tran, Vy, Soklaski, Ryan, Liang, Yufeng, Yang, Li. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Physical review. B, Condensed matter and materials physics, vol.89, no.23, 235319-.
Doganov, Rostislav A., O’Farrell, Eoin C. T., Koenig, Steven P., Yeo, Yuting, Ziletti, Angelo, Carvalho, Alexandra, Campbell, David K., Coker, David F., Watanabe, Kenji, Taniguchi, Takashi, Neto, Antonio H. Castro, Özyilmaz, Barbaros. Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere. Nature communications, vol.6, 6647-.
Wang, Q., Tao, X., Yang, L., Gu, Y.. Current crowding in two-dimensional black-phosphorus field-effect transistors. Applied physics letters, vol.108, no.10, 103109-.
Wang, Jing, Polizzi, Eric, Ghosh, Avik, Datta, Supriyo, Lundstrom, Mark. Theoretical investigation of surface roughness scattering in silicon nanowire transistors. Applied physics letters, vol.87, no.4, 043101-.
Li, Jia, Ma, T.-P.. Scattering of silicon inversion layer electrons by metal/oxide interface roughness. Journal of applied physics, vol.62, no.10, 4212-4215.
Perello, David J., Chae, Sang Hoon, Song, Seunghyun, Lee, Young Hee. High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering. Nature communications, vol.6, 7809-.
Kain Lu Low, Yee-Chia Yeo, Gengchiau Liang. Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials. IEEE transactions on electron devices, vol.63, no.2, 773-780.
Kresse, G., Furthmüller, J.. Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set. Physical review. B, Condensed matter, vol.54, no.16, 11169-11186.
J Appl Phys Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs demin 2016 10.1063/1.4953256 119 214312
Wan, Runlai, Cao, Xi, Guo, Jing. Simulation of phosphorene Schottky-barrier transistors. Applied physics letters, vol.105, no.16, 163511-.
Du, Yuchen, Liu, Han, Deng, Yexin, Ye, Peide D.. Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling. ACS nano, vol.8, no.10, 10035-10042.
IEEE Electron Device Lett Performance limits projection of black phosphorous field-effect transistors lam 2014 10.1109/LED.2014.2333368 35 963
Du, Haiwei, Lin, Xi, Xu, Zhemi, Chu, Dewei. Recent developments in black phosphorus transistors. Journal of materials chemistry. C, Materials for optical and electronic devices, vol.3, no.34, 8760-8775.
Radisavljevic, Branimir, Kis, Andras. Mobility engineering and a metal–insulator transition in monolayer MoS2. Nature materials, vol.12, no.9, 815-820.
Lee, Eduardo J. H., Balasubramanian, Kannan, Weitz, Ralf Thomas, Burghard, Marko, Kern, Klaus. Contact and edge effects in graphene devices. Nature nanotechnology, vol.3, no.8, 486-490.
Hu, Zhi-Xin, Kong, Xianghua, Qiao, Jingsi, Normand, Bruce, Ji, Wei. Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus. Nanoscale, vol.8, no.5, 2740-2750.
Fiori, Gianluca, Bonaccorso, Francesco, Iannaccone, Giuseppe, Palacios, Tomás, Neumaier, Daniel, Seabaugh, Alan, Banerjee, Sanjay K., Colombo, Luigi. Electronics based on two-dimensional materials. Nature nanotechnology, vol.9, no.10, 768-779.
Zhang, Hua. Ultrathin Two-Dimensional Nanomaterials. ACS nano, vol.9, no.10, 9451-9469.
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., Kis, A.. Single-layer MoS2 transistors. Nature nanotechnology, vol.6, no.3, 147-150.
Schwierz, F., Pezoldt, J., Granzner, R.. Two-dimensional materials and their prospects in transistor electronics. Nanoscale, vol.7, no.18, 8261-8283.
Das, Saptarshi, Robinson, Joshua A., Dubey, Madan, Terrones, Humberto, Terrones, Mauricio. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids. Annual review of materials research, vol.45, 1-27.
Proc VLSI Technol Symp High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 $\text{k}\Omega \mu \text{m}$ ) and record high drain current ( $460~\mu \text{A}/\mu \text{m}$ ) yang 2014 1
Demin Yin, Gyuchull Han, Youngki Yoon. Scaling Limit of Bilayer Phosphorene FETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.36, no.9, 978-980.
Li, Likai, Yu, Yijun, Ye, Guo Jun, Ge, Qingqin, Ou, Xuedong, Wu, Hua, Feng, Donglai, Chen, Xian Hui, Zhang, Yuanbo. Black phosphorus field-effect transistors. Nature nanotechnology, vol.9, no.5, 372-377.
J Appl Phys First principles study of metal contacts to monolayer black phosphorous anuja 2014 10.1063/1.4901998 116 204302
Anantram, M. P., Lundstrom, Mark S., Nikonov, Dmitri E.. Modeling of Nanoscale Devices. Proceedings of the IEEE, vol.96, no.9, 1511-1550.
Ramchandani, M G. Energy band structure of gold. Journal of physics. C, Solid state physics, vol.3, no.no.suppl1, S1-S9.
Heyd, Jochen, Scuseria, Gustavo E.. Efficient hybrid density functional calculations in solids: Assessment of the Heyd-Scuseria-Ernzerhof screened Coulomb hybrid functional. The Journal of chemical physics, vol.121, no.3, 1187-1192.
Heyd, Jochen, Scuseria, Gustavo E., Ernzerhof, Matthias. Hybrid functionals based on a screened Coulomb potential. The Journal of chemical physics, vol.118, no.18, 8207-8215.
International Technology Roadmap for Semiconductor 2016
Comput Phys Commun wannier90: A tool for obtaining maximally-localised Wannier functions mostofi 2014 10.1016/j.cpc.2014.05.003 185 685
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
저자가 APC(Article Processing Charge)를 지불한 논문에 한하여 자유로운 이용이 가능한, hybrid 저널에 출판된 논문
※ AI-Helper는 부적절한 답변을 할 수 있습니다.