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Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC

Applied surface science, v.433, 2018년, pp.108 - 115  

Suvanam, Sethu Saveda (School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden) ,  Usman, Muhammed (School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden) ,  Martin, David (School of Engineering, University of Warwick, Coventry, CV4 7 AL, United Kingdom) ,  Yazdi, Milad. G. (School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden) ,  Linnarsson, Margareta (School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden) ,  Tempez, Agnès (Horiba France SAS, CS 45002, 91120, Palaiseau, France) ,  Götelid, Mats (School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden) ,  Hallén, Anders (School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)

Abstract AI-Helper 아이콘AI-Helper

Abstract In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a...

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