Suvanam, Sethu Saveda
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Usman, Muhammed
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Martin, David
(School of Engineering, University of Warwick, Coventry, CV4 7 AL, United Kingdom)
,
Yazdi, Milad. G.
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Linnarsson, Margareta
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Tempez, Agnès
(Horiba France SAS, CS 45002, 91120, Palaiseau, France)
,
Götelid, Mats
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
,
Hallén, Anders
(School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden)
Abstract In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a...
Abstract In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800°C. These defects disappear after annealing at 1100°C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0
Abstract In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800°C. These defects disappear after annealing at 1100°C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0
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