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NTIS 바로가기Current applied physics : the official journal of the Korean Physical Society, v.18 no.9, 2018년, pp.1080 - 1086
Kang, Min-Soo (Corresponding author.) , Cho, Won-Ju
In this study, we fabricated high-performance a-IGZO TFTs by forming Al2O3 and a-IGZO thin films for gate insulator and active channel layer, respectively, using a sol-gel process. MWI for low thermal budget process was used to condensate Al2O3 and a-IGZO films, which was compared with the CTA. It i...
Adv. Mater. Fortunato 24 2945 2012 10.1002/adma.201103228 Oxide semiconductor thin-film transistors: a review of recent advances
IEEE Electron. Device Lett. Lee 17 160 1996 10.1109/55.485160 Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization
Mater. Today Ohta 7 42 2004 10.1016/S1369-7021(04)00288-3 Transparent oxide optoelectronics
Nature Nomura 432 488 2004 10.1038/nature03090 Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Jpn. J. Appl. Phys. Nomura 45 4303 2006 10.1143/JJAP.45.4303 Amorphous oxide semiconductors for high-performance flexible thin-film transistors
Adv. Mater. Zan 24 3509 2012 10.1002/adma.201200683 Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer
Appl. Phys. Lett. Nayak 97 2010 10.1063/1.3514249 Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric
Appl. Phys. Lett. Kim 103 2013 Solution-processed zinc-indium-tin oxide thin-film transistors for flat-panel displays
IEEE Electron. Device Lett. Lee 31 225 2010 10.1109/LED.2009.2038806 High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature
ACS Appl. Mater. Interfaces Kwon 6 3371 2014 10.1021/am4054139 Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide
J. Mater. Chem. Judeinstein 6 511 1996 10.1039/JM9960600511 Hybrid organic-inorganic materials: a land of multidisciplinarity
J. Electrochem. Soc. Kim 156 H7 2009 10.1149/1.2976027 Formation mechanism of solution-processed nanocrystalline InGaZnO thin film as active channel layer in thin-film transistor
ACS Appl. Mater. Interfaces Lee 5 2585 2013 10.1021/am3032629 Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors
ACS Appl. Mater. Interfaces Park 5 410 2013 10.1021/am3022625 Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric
J. Mater. Chem. Rim 22 12491 2012 10.1039/c2jm16846d Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors
Appl. Phys. Lett. Su 102 2013 10.1063/1.4804993 High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing
Bull. Mater. Sci. Das 32 1 2009 10.1007/s12034-009-0001-4 Prospects of microwave processing: an overview
Int. J. Miner. Process. Haque 57 1 1999 10.1016/S0301-7516(99)00009-5 Microwave energy for mineral treatment processes-a brief review
J. Electrochem. Soc. Kim 156 2009 Formation mechanism of solution-processed nanocrystalline InGaZnO thin film as active channel layer in thin-film transistor
J. Non-cryst. Solids Phani 352 4093 2006 10.1016/j.jnoncrysol.2006.06.013 Evaluation of structural and mechanical properties of aluminum oxide thin films deposited by a sol-gel process: comparison of microwave to conventional anneal
IEEE Trans. Electron. Dev. Chan 44 455 1997 10.1109/16.556156 Polished TFT's: surface roughness reduction and its correlation to device performance improvement
J. Appl. Phys. Hastas 92 4741 2002 10.1063/1.1508421 Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors
Nanotechnology Peng 24 2013 10.1088/0957-4484/24/48/484010 Low temperature, solution-processed alumina for organic solar cells
J. Disp. Technol. Nathan 10 917 2017 10.1109/JDT.2013.2292580 Amorphous oxide semiconductor TFTs for displays and imaging
Appl. Phys. Lett. Ryu 95 2009 10.1063/1.3206948 High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: combinatorial approach
ACS Appl. Mater. Interfaces Kim 5 3255 2013 10.1021/am400110y Photobias instability of high performance solution processed amorphous zinc tin oxide transistors
Thin Solid Films Wehrspohn 383 117 2001 10.1016/S0040-6090(00)01581-9 Stability of plasma deposited thin film transistors-comparison of amorphous and microcrystalline silicon
J. Appl. Phys. Zafar 93 9298 2003 10.1063/1.1570933 Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
Mater. Sci. Eng. B Yadoji 98 3 269 2003 10.1016/S0921-5107(03)00063-1 Microwave sintering of Ni-Zn ferrites: comparison with conventional sintering
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