We report a suitable Li-doped NiOx hole-extraction layer of p-i-n type planar perovskite solar cell as an alternative to organic material such as PEDOT:PSS. The Li-doped NiOx used as hole-extraction layer can be prepared by facile method of just adding Li source to NiOx precursor solution to form Li-doped NiOx layer. The presence of Li in NiOx layer has an influence on conductivity of the NiOx layer which is evidenced by the conductive AFM. In addition, the NiOx layer with 50 nm thickness prevents a lot of pinholes inside the film and relatively low processing temperature of 200 degrees C has the advantage of wide choice of transparent conduction oxide substrate. As a result, p-i-n type planar perovskite solar cell incorporating the Li-doped NiOx hole-extraction layer is improved with significantly enhanced fill factor leading to increase in conversion efficiency of 15.41%. (C) 2017 Elsevier B.V. All rights reserved.
원문 PDF 다운로드
원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다. (원문복사서비스 안내 바로 가기)
DOI 인용 스타일