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NTIS 바로가기Current applied physics : the official journal of the Korean Physical Society, v.18 suppl., 2018년, pp.S68 - S74
Kim, Sihyun (Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea) , Kwon, Dae Woong (Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720-1770, USA) , Kim, Sangwan (Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea) , Lee, Ryoongbin (Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea) , Kim, Tae-Hyeon (Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE), Seoul National University, Seoul 151-742, Republic of Korea) , Mo, Hyun-Sun (School of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea) , Kim, Dae Hwan (School of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea) , Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and Department of E)
The mechanism of drift effect in pH-sensitive silicon nanowire (SiNW) ion sensitive field effect transistor (ISFET) is comprehensively studied by measuring the time-dependent drain current (I-D) and the gate capacitance (C-G) under different liquid-gate biases (V(LG)s) and pH levels. It was revealed...
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