참고문헌 (29)

1. Kumar, V., Lu, W., Schwindt, R., Kuliev, A., Simin, G., Yang, J., Asif Khan, M., Adesida, I.. AlGaN/GaN HEMTs on SiC with f_T of over 120 GHz. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.23, no.8, 455-457.

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2. Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.. High-power AlGaN/GaN HEMTs for Ka-band applications. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.26, no.11, 781-783.

   상세보기

3. Green, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R., Eastman, L.F.. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.21, no.6, 268-270.

   상세보기

4. Vetury, R., Zhang, N.Q., Keller, S., Mishra, U.K.. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs. IEEE transactions on electron devices, vol.48, no.3, 560-566.

   상세보기

5. Eastman, L.F., Tilak, V., Smart, J., Green, B.M., Chumbes, E.M., Dimitrov, R., Kim, Hyungtak, Ambacher, O.S., Weimann, N., Prunty, T., Murphy, M., Schaff, W.J., Shealy, J.R.. Undoped AlGaN/GaN HEMTs for microwave power amplification. IEEE transactions on electron devices, vol.48, no.3, 479-485.

   상세보기

6. Hashizume, Tamotsu, Kotani, Junji, Hasegawa, Hideki. Leakage mechanism in GaN and AlGaN Schottky interfaces. Applied physics letters, vol.84, no.24, 4884-4886.

   상세보기

7. Liu, Z. H., Ng, G. I., Arulkumaran, S., Maung, Y. K. T., Teo, K. L., Foo, S. C., Sahmuganathan, V.. Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator. Applied physics letters, vol.95, no.22, 223501-.

   상세보기

8. Ye, P. D., Yang, B., Ng, K. K., Bude, J., Wilk, G. D., Halder, S., Hwang, J. C. M.. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric. Applied physics letters, vol.86, no.6, 063501-.

   상세보기

9. Khan, M.A., Hu, X., Sumin, G., Lunev, A., Yang, J., Gaska, R., Shur, M.S.. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.21, no.2, 63-65.

   상세보기

10. Chumbes, E.M., Smart, J.A., Prunty, T., Shealy, J.R.. Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates. IEEE transactions on electron devices, vol.48, no.3, 416-419.

    상세보기

11. Hashizume, Tamotsu, Anantathanasarn, Sanguan, Negoro, Noboru, Sano, Eiichi, Hasegawa, Hideki, Kumakura, Kazuhide, Makimoto, Toshiki. Al₂O₃ Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers. Japanese journal of applied physics. Part 2, Letters, vol.43, no.b6, L777-L779.

    상세보기

12. Lee, Ching-Ting, Chen, Hong-Wei, Lee, Hsin-Ying. Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN. Applied physics letters, vol.82, no.24, 4304-4306.

    상세보기

13. Liu, Chang, Chor, Eng Fong, Tan, Leng Seow. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors. Applied physics letters, vol.88, no.17, 173504-.

    상세보기

14. Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A.. AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation. Applied physics letters, vol.82, no.15, 2530-2532.

    상세보기

15. Balachander, Krishnan, Arulkumaran, Subramaniam, Ishikawa, Hiroyasu, Baskar, Krishnan, Egawa, Takashi. Studies on electron beam evaporated ZrO₂/AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors. Physica status solidi. PSS. A, Applications and materials science, vol.202, no.2, R16-R18.

    상세보기

16. Chang, S.-J., Jung, H.-W., Do, J.-W., Cho, K. J., Kim, J.-J., Jang, Y. J., Yoon, H. S., Ahn, H.-K., Min, B.-G., Kim, H., Yang, J.-M., Kwon, H.-S., Lim, J.-W.. Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al₂O₃ Bi-Layer Passivation. ECS journal of solid state science and technology : jss, vol.7, no.6, N86-N90.

    상세보기

17. Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, S., Ranjan, K.. Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al₂O₃ dielectric gate stack. Physica status solidi. PSS. C, Current topics in solid state physics, vol.10, no.11, 1421-1425.

    상세보기

18. Xiao Sun, Saadat, Omair I., Jin Chen, Zhang, E. Xia, Cui, Sharon, Palacios, Tomas, Fleetwood, Dan M., Ma, T. P.. Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs. IEEE transactions on nuclear science, vol.60, no.6, 4074-4079.

    상세보기

19. Ahn, Shihyun, Kim, Byung-Jae, Lin, Yi-Hsuan, Ren, Fan, Pearton, Stephen J., Yang, Gwangseok, Kim, Jihyun, Kravchenko, Ivan I.. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide. Journal of vacuum science and technology. materials, processing, measurement, & phenomena : JVST B. B, Nanotechnology & microelectronics, vol.34, no.5, 051202-.

    상세보기

20. Keum, Dongmin, Kim, Hyungtak. Energy-Dependent Degradation Characteristics of AlGaN/GaN MISHEMTs with 1, 1.5, and 2 MeV Proton Irradiation. ECS journal of solid state science and technology : jss, vol.7, no.9, Q159-Q163.

    상세보기

21. Gao, Z., Romero, M. F., Redondo-Cubero, A., Pampillón, M. A., San Andrés, E., Calle, F.. Effects of Gd₂O₃ Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.5, 611-614.

    상세보기

22. Bhuiyan, Maruf A., Zhou, Hong, Chang, Sung-Jae, Lou, Xiabing, Gong, Xian, Jiang, Rong, Gong, Huiqi, Zhang, En Xia, Won, Chul-Ho, Lim, Jong-Won, Lee, Jung-Hee, Gordon, Roy G., Reed, Robert A., Fleetwood, Daniel M., Ye, Peide, Ma, Tso-Ping. Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric. IEEE transactions on nuclear science, vol.65, no.1, 46-52.

    상세보기

23. Hayama, K., Takakura, K., Ohyama, H., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C., Kokkoris, M.. Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs. IEEE transactions on nuclear science, vol.51, no.6, 3795-3800.

    상세보기

24. Akturk, A., McGarrity, J. M., Potbhare, S., Goldsman, N.. Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs. IEEE transactions on nuclear science, vol.59, no.6, 3258-3264.

    상세보기

25. Jae-Joon Song, Bo Kyoung Choi, En Xia Zhang, Schrimpf, R. D., Fleetwood, D. M., Chan-Hoon Park, Yoon-Ha Jeong, Ohyun Kim. Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation. IEEE transactions on nuclear science, vol.58, no.6, 2871-2875.

    상세보기

26. Xinwen Hu, Karmarkar, A.P., Bongim Jun, Fleetwood, D.M., Schrimpf, R.D., Geil, R.D., Weller, R.A., White, B.D., Bataiev, M., Brillson, L.J., Mishra, U.K.. Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors. IEEE transactions on nuclear science, vol.50, no.6, 1791-1796.

    상세보기

27. Jiang, Rong, Zhang, En Xia, McCurdy, Michael W., Chen, Jin, Shen, Xiao, Wang, Pan, Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S., Pantelides, Sokrates T.. Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs. IEEE transactions on nuclear science, vol.64, no.1, 218-225.

    상세보기

28. Chang, S.-J., Bhuiyan, M. A., Won, C.-H., Lee, J.-H., Jung, H. W., Shin, M. J., Lim, J.-W., Lee, J.-H., Ma, T. P.. Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire. ECS journal of solid state science and technology : jss, vol.5, no.12, N102-N107.

    상세보기

29. Chang, Sung-Jae, Kang, Hee-Sung, Lee, Jae-Hoon, Yang, Jie, Bhuiyan, Maruf, Jo, Young-Woo, Cui, Sharon, Lee, Jung-Hee, Ma, Tso-Ping. Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors. Japanese journal of applied physics, vol.55, no.4, 044104-.

    상세보기