A method for processing a semiconductor substrate is described herein. The method described herein includes generating fluorine radicals and ions, delivering the fluorine radicals through an ion blocker to a processing region, and removing one or more portions of a gate structure to expose one or mo
A method for processing a semiconductor substrate is described herein. The method described herein includes generating fluorine radicals and ions, delivering the fluorine radicals through an ion blocker to a processing region, and removing one or more portions of a gate structure to expose one or more portions of a gate dielectric material disposed thereunder. The gate structure includes at least two ceramic or metal layers, and the gate dielectric material is made of a high-k dielectric material. A substrate having the gate structure and gate dielectric material formed thereon is disposed in the processing region, and the temperature of the substrate is maintained at about 60 degrees Celsius or higher. By etching the gate structure using fluorine radicals at a temperature greater or equal to 60 degrees Celsius, the at least two ceramic or metal layers have a flat cross sectional profile.
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1. A method, comprising: placing a substrate into a plasma processing chamber;forming a plasma in a plasma cavity of the plasma processing chamber;flowing radicals in the plasma to a processing region of the plasma processing chamber, wherein ions in the plasma are blocked from entering the processi
1. A method, comprising: placing a substrate into a plasma processing chamber;forming a plasma in a plasma cavity of the plasma processing chamber;flowing radicals in the plasma to a processing region of the plasma processing chamber, wherein ions in the plasma are blocked from entering the processing region; andremoving one or more portions of a gate structure disposed on the substrate. 2. The method of claim 1, wherein the gate structure is disposed on a gate dielectric material. 3. The method of claim 2, wherein the gate dielectric material comprises a high-k dielectric material. 4. The method of claim 1, wherein the gate structure includes two or more layers. 5. The method of claim 4, wherein the two or more layers each comprises TiN, TiSiN, TaN, TiAl, or alloys thereof. 6. The method of claim 5, wherein the two or more layers are made of different materials. 7. The method of claim 1, wherein the radicals flowing into the processing region comprise fluorine radicals. 8. The method of claim 7, wherein the radicals flowing into the processing region further comprise oxygen radicals. 9. A method, comprising: placing a substrate into a plasma processing chamber, wherein the substrate includes a gate structure disposed thereon, wherein the gate structure includes two or more layers, and the two or more layers are made of different materials;forming a plasma in a plasma cavity of the plasma processing chamber;flowing radicals in the plasma to a processing region of the plasma processing chamber, wherein ions in the plasma are blocked from entering the processing region; andremoving one or more portions of the gate structure disposed on the substrate. 10. The method of claim 9, wherein the two or more layers each comprises TiN, TiSiN, TaN, TiAl, or alloys thereof. 11. The method of claim 9, wherein each of the two or more layers include an edge extending over an edge of a layer disposed thereon by at most 30 Angstroms after the one or more portions of the gate structure is removed. 12. The method of claim 9, wherein each of the two or more layers include an exposed portion after the one or more portions of the gate structure is removed, wherein each exposed portion has a width of at most 30 Angstroms. 13. The method of claim 9, wherein a temperature of the substrate during the removing of the one or more portions of the gate structure ranges from about 60 degrees Celsius to about 300 degrees Celsius. 14. A method, comprising: placing a substrate into a plasma processing chamber;forming a plasma in a plasma cavity of the plasma processing chamber;flowing radicals in the plasma to a processing region of the plasma processing chamber, wherein ions in the plasma are blocked from entering the processing region;removing one or more portions of a gate structure disposed on the substrate; andremoving one or more photoresists and residue radicals disposed on the substrate. 15. The method of claim 14, wherein the gate structure includes two or more layers. 16. The method of claim 15, wherein the two or more layers each comprises TiN, TiSiN, TaN, TiAl, or alloys thereof. 17. The method of claim 16, wherein the two or more layers are made of different materials. 18. The method of claim 17, wherein each of the two or more layers include an edge extending over an edge of a layer disposed thereon by at most 30 Angstroms after the one or more portions of the gate structure is removed. 19. The method of claim 18, wherein each of the two or more layers include an exposed portion after the one or more portions of the gate structure is removed, wherein each exposed portion has a width of at most 30 Angstroms. 20. The method of claim 14, wherein the radicals flowing into the processing region comprise fluorine radicals.
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