SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF ITS PRODUCTION
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01L-021/02
H01L-029/20
H01L-029/205
H01L-029/778
H01L-029/66
출원번호
US-0542419
(2015-01-09)
공개번호
US-0365469
(2017-12-21)
국제출원번호
PCT/EP2015/050353
(2015-01-09)
발명자
/ 주소
Janzén, Erik
Chen, Jr-Tai
출원인 / 주소
Janzén, Erik
인용정보
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초록▼
The present document discloses a semiconductor device structure (1) comprising a SiC substrate (11), an Inx1Aly1Ga1−x1−y1N buffer layer (13), wherein x1=0−1, y1=0−1 and x1+y1=1, and an Inx2Aly2Ga1−x2−y2N nucleation layer (12), wherein x2=0−1, y2=0−1 and x2+y2=1, sandwiched between the SiC substrate
The present document discloses a semiconductor device structure (1) comprising a SiC substrate (11), an Inx1Aly1Ga1−x1−y1N buffer layer (13), wherein x1=0−1, y1=0−1 and x1+y1=1, and an Inx2Aly2Ga1−x2−y2N nucleation layer (12), wherein x2=0−1, y2=0−1 and x2+y2=1, sandwiched between the SiC substrate (11) and the buffer layer (13). The buffer layer (13) presents a rocking curve with a (102) peak having a FWHM below 250 arcsec, and the nucleation layer (12) presents a rocking curve with a (105) peak having a FWHM below 200 arcsec, as determined by X-ray Diffraction (XRD). Methods of making such a semiconductor device structure are disclosed.
대표청구항▼
1.-28. (canceled) 29. A semiconductor device structure comprising: a SiC substrate,an Inx1Aly1Ga1−x1−y1N buffer layer, wherein x1=0−1, y1=0−1 and x1+y1=1, preferably x10.50, more preferably x20.70 and most preferably x20.90, sandwiched between the SiC substrate and the buffer layer,whereinthe buffer
1.-28. (canceled) 29. A semiconductor device structure comprising: a SiC substrate,an Inx1Aly1Ga1−x1−y1N buffer layer, wherein x1=0−1, y1=0−1 and x1+y1=1, preferably x10.50, more preferably x20.70 and most preferably x20.90, sandwiched between the SiC substrate and the buffer layer,whereinthe buffer layer has a thickness of 1 to 4 μm, preferably 1.3 to 3 μm and most preferably 1.5 to 2 μm,the nucleation layer has a thickness of 10−100 nm, preferably 10-50 nm and most preferably 10-40 nm,the buffer layer presents a rocking curve with a (102) peak having a FWHM below 250 arcsec, andthe nucleation layer presents a rocking curve with a (105) peak having a FWHM below 200 arcsec, as determined by X-ray Diffraction (XRD). 30. The semiconductor device structure according to claim 29, wherein the buffer layer is GaN. 31. The semiconductor device structure according to claim 29, wherein the nucleation layer is AlN. 32. The semiconductor device structure according to claim 29, wherein the SiC polytype is 4H, 6H, or 3C. 33. The semiconductor device structure according to claim 29, wherein the surface of the SiC has less than 5% oxygen monolayer, as determined by X-ray Photoelectron Spectroscopy. 34. The semiconductor device structure according to claim 29, wherein the morphology of the nucleation layer has a full coalescence with 0 to 10 pits per μm2, preferably 0 to 8 pits per μm2, most preferably 0 to 5 pits per μm2. 35. The semiconductor device structure according to according to claim 29, wherein the nucleation layer is fully strained at a thickness of up to at least 100 nm, wherein an in-plane lattice constant of the nucleation layer is exactly the same, or exactly the same +/−0.15%, preferably +/−0.05% or +/−0.02%, as an in-plane lattice constant of the SiC substrate. 36. A semiconductor device formed from the semiconductor device structure according to claim 29. 37. A high electron mobility transistor comprising a semiconductor structure according to claim 29. 38. A method of producing a semiconductor device structure, comprising: providing a SiC substrate, andproviding an Inx2Aly2Ga1−x2−y2N nucleation layer, wherein x2=0−1, y2=0−1, preferably x20.50, more preferably x20.70 and most preferably x20.90, and x2+y2=1, on the SiC substrate,providing an Inx1Aly1Ga1−x1−y1N buffer layer, wherein x1=0−1, y1=0−1 and x1+y1=1, preferably x1<0.05 and y1<0.50, more preferably x1<0.03 and y1<0.30 and most preferably x1<0.01 and y1<0.10,wherein the pressure upon growth of the nucleation layer and of the buffer layer is 200 mbar to 10 mbar, preferably 100 mbar to 20 mbar, most preferably 60 mbar to 40 mbar,the starting temperature upon growth of the nucleation layer is 800° C. to 1150° C., preferably of 900° C.-1100° C., most preferably of 950° C.-1050° C., andthe temperature upon growth of the nucleation layer is 800° C. to 1150° C., preferably of 900° C.-1100° C., most preferably of 950° C.-1050° C., andthe nucleation layer and the buffer layer is grown by Metal Organic Chemical Vapor Deposition (MOCVD) or Metal Organic Vapor Phase Epitaxy (MOVPE),whereinthe temperature upon growth of the nucleation layer is ramped up by 5-25° C./min, preferably by 7-20° C./min and most preferably by 10−15° C./min, for a time period of 2 min to 20 min,the buffer layer is provided to a thickness of 1 to 4μm, preferably 1.3 to 3μm and most preferably 1.5 to 2μm,the nucleation layer is provided to a thickness of 10−100 nm, preferably 10-50 nm and most preferably 10-40 nm. 39. The method as claimed in claim 38, wherein the substrate is pretreated in situ or ex situ by an etching gas. 40. The method as claimed in claim 39, wherein the etching gas comprises H2, HCl, HF, HBr or SiF4, Cl2, or a combination of H2 and any one of the other. 41. The method as claimed in claim 39, wherein the pressure is 100 mbar to 10 mbar upon pretreatment at a temperature of at least 1250° C., or wherein the pressure is 1000 mbar to 10 mbar upon pretreatment at a temperature of at least 1400° C. 42. The method as claimed in claim 39, wherein the etching gas comprises H2, provided at a flow rate of 20 to 30 l/min and/or HCl provided at a flow rate of 100 to 200 ml/min. 43. The method as claimed in claim 38, wherein the at least one of the precursors for nucleation growth by MOCVD or MOVPE, is metal-organic comprising Al2(CH3)6, and the other one is NH3, said precursors being provided by at least one carrier gas comprising Ar, H2 or N2. 44. The method as claimed in claim 38, wherein the growth rate of the nucleation layer is 100 nm/h to 1000 nm/h.
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