|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||29/583 ; 29/585 ; 29/590 ; 29/591|
|발명자 / 주소|
|출원인 / 주소|
|인용정보||피인용 횟수 : 31 인용 특허 : 1|
A low pressure transducer and methods of fabricating the same employ piezoresistive bridges deposited on or diffused within a wafer of n-type silicon, the wafer is secured to a glass sheet and is then bonded to a silicon diaphragm of a relatively large size and fabricated from a distinct piece of silicon of non-critical electrical characteristics. Methods for producing a plurality of such devices by using compatible processing steps are also provided.
The method of fabricating a transducer comprising the steps of: a. diffusing a plurality of piezoresistive patterns on a surface of a single n-type silicon wafer, b. bonding a thin glass sheet to the surface of said wafer opposite to that surface upon which said patterns are diffused, c. separating each of said patterns to form a plurality of individual patterns, and d. glass bonding each individual pattern on a separate diaphragm of silicon, of non-critical electrical properties as compared to said n-type wafer to form a plurality of separate diaphragm ...