High efficiency thermoelectric generator for the direct conversion of heat into electrical energy
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01V-001/30
출원번호
US-0423475
(1973-12-10)
발명자
/ 주소
Marinescu, Matei
출원인 / 주소
Institutul de Cercetaro Energetice Industriale si Proictari Utilaje Energetice
인용정보
피인용 횟수 :
30인용 특허 :
0
초록▼
The present invention concerns a new thermoelectric generator, the operation of which is due to a new effect that takes place in a closed chain uniformly heated at an optimum temperature, the chain consisting of a semi-conductor comprises between two different metals the difference of the work-funct
The present invention concerns a new thermoelectric generator, the operation of which is due to a new effect that takes place in a closed chain uniformly heated at an optimum temperature, the chain consisting of a semi-conductor comprises between two different metals the difference of the work-function of which are related to the value of the optimum temperature quantitatively, through a certain formula given in the specification. For maximum electric power delivered, the concentration of the holes into the semiconductor must be of the order of 10 18 n/cm 3, and the concentration of electrons into the same of the order of 10 8 n/cm 3, at 20° C. Such a chain has in the absence of any temperature gradient, an efficiency near unity.
대표청구항▼
1. In a thermoelectric generator unit for converting heat directly from a single heat source into electrical energy, at least one active cell spaced from the heat source and comprising two identical metallic terminal supports having sandwiched therebetween, in intimate contact over their entire surf
1. In a thermoelectric generator unit for converting heat directly from a single heat source into electrical energy, at least one active cell spaced from the heat source and comprising two identical metallic terminal supports having sandwiched therebetween, in intimate contact over their entire surface with each other and with the supports, first, second and third successive thin films, each of the films having a thickness of a few microns, the first and third ones of the films being metals that respectively have different work functions θ 1 and θ 3, the second film being of semiconductor material having a concentration of holes of the order of 10 18 n/cm 3 and of electrons of the order of 10 8 n/cm 3 at 20° C., and means including a single heat source completely surrounding the cell for uniformly heating the cell to a temperature T ≤ T c, where ##EQU## k is Boltsman's constant, (P 2 ') T = T c is the concentration of holes in the second film adjacent its junction with the first film, (P 2 ") T = T c is the concentration of holes in the second film adjacent its junction with the third film, ##EQU## P m and n m are respectively the concentrations of holes and electrons in the metals, and P 2 and n 2 are respectively the concentrations of holes and electrons in the bulk of the semiconductor material. 2. A thermoelectric generator unit according to claim 1, comprising a plurality of said cells connected in series. 3. A thermoelectric generator unit according to claim 1, comprising a plurality of said cells connected in parallel. 4. A thermoelectric generator unit according to claim 1, wherein the three thin films of each cell are successively deposited by evaporation in a vacuum on a surface of one of the terminal supports. 5. A thermoelectric generator unit as claimed in claim 1, in which the first and third films are deposited by evaporation in a vacuum on opposed planes or faces of the second film. 6. A thermoelectric generator unit according to claim 2, in which the cells are sequentially arranged with first and second ones of the metallic supports disposed at opposite ends thereof, in which the heating means completely surrounding the cell comprises an oven of ceramic material for providing thermal insulation of the cells, and in which the single heat source extends through opposed walls of the oven to terminate adjacent the respective first and second metallic supports.
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