초록 ▼

An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprises means positioned within the chamber for supporting the substrates in a stack-like relationship wherein the surfaces are substantially parallel to each other and are

An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprises means positioned within the chamber for supporting the substrates in a stack-like relationship wherein the surfaces are substantially parallel to each other and are separated by spacings, and a plurality of gas nozzles connected to a source of gas and positioned within the chamber so that the flow of gas therefrom is directed, respectively, into the spacings between the surfaces. A method of utilizing this apparatus comprises rotating the substrates while moving the nozzles back and forth in an arc, so that the flow of gas therefrom is directed into the spacings at different angles.

대표청구항 ▼

An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprising: means positioned within said chamber for supporting said substrates in a stack-like relationship wherein said surfaces are substantially parallel to each other and

An apparatus for chemically vapor-depositing a material onto surfaces of a plurality of substrates within a reaction chamber comprising: means positioned within said chamber for supporting said substrates in a stack-like relationship wherein said surfaces are substantially parallel to each other and are separated by spacings, a plurality of gas nozzles connected to a source of gas and positioned within said chamber so that the flow of gas therefrom is directed respectively into said spacings between said surfaces, and and means for moving said nozzles so that the flow of said gas therefrom is directed into said spacings at different angles.