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Semiconductor device having a body of amorphous silicon 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-045/00
출원번호 US-0710183 (1976-07-30)
발명자 / 주소
  • Carlson David Emil (Yardley PA)
출원인 / 주소
  • RCA Corporation (New York NY 02)
인용정보 피인용 횟수 : 151  인용 특허 : 2

초록

An amorphous silicon material, fabricated by the process of a glow discharge in silane, is utilized as the body of semiconductor devices.

대표청구항 ▼

A semiconductor device comprising: a body of amorphous silicon fabricated by a glow discharge in silane; and a metallic region on a surface of said body providing a surface barrier junction at the interface of said metallic region and said body which is capable of generating a space charge region in

이 특허에 인용된 특허 (2)

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이 특허를 인용한 특허 (151)

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