초록 ▼

A monolithic semiconductor integrated circuit - ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of

A monolithic semiconductor integrated circuit - ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 5,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

대표청구항 ▼

A method of fabricating a monolithic semiconductor integrated circuit and ferroelectric memory device comprising: A. forming first layer interconnects on the surface of a semiconductor integrated circuit; B. depositing a non-semiconductor dielectric and forming interconnect and bonding pad vias ther

A method of fabricating a monolithic semiconductor integrated circuit and ferroelectric memory device comprising: A. forming first layer interconnects on the surface of a semiconductor integrated circuit; B. depositing a non-semiconductor dielectric and forming interconnect and bonding pad vias therein; c. depositing a conductive layer and forming a bottom electrode; D. applying a ferroelectric layer; E. filling any imperfections in said ferroelectric layer with insulative material; F. depositing a conductive layer and forming a top electrode wherein said conductive layer is selected from the group consisting essentially of conductive metal oxides, metals and metal alloys which will oxidize to form conductive oxides; and G. applying conductive material to the bonding and interconnect pads.