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An improvement in a method for producing a synthetic hydroxyl ion-free quartz glass wherein a hydrogen free silicon compound is heated in a hydrogen-free gas stream while the gas stream is passed through an induction coupled plasma burner, the gas stream containing elemental and/or bound oxygen and

An improvement in a method for producing a synthetic hydroxyl ion-free quartz glass wherein a hydrogen free silicon compound is heated in a hydrogen-free gas stream while the gas stream is passed through an induction coupled plasma burner, the gas stream containing elemental and/or bound oxygen and the oxidation product is deposited on a refractory support as a vitreous mass, the improvement lying in including in the gas stream a gaseous hydrogen-free, thermally decomposable compound which yields fluorine in an amount of at least 500 gms. per kilogram of silica to be produced; an apparatus for producing a synthetic OH ion-free quartz glass comprising an induction coupled plasma burner which burner has disposed thereabout 3 concentric quartz glass tubes disposed in stepped configuration of which the outermost tube is the longest and the innermost tube is the shortest. The apparatus includes means for passing through the innermost tube a hydrogen-free gas stream containing elemental oxygen and/or bound oxygen together with a gaseous hydrogen free thermally decomposable compound which yields fluorine. The apparatus further contains means for passing a separating gas such as oxygen through the space defined by the innermost tube and the middle tube and the middle tube and the outermost tube.

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A method for forming a coating of a fluorine containing synthetic OH ion-free quartz glass on a refractory support which comprises passing a hydrogen-free silicon compound, gaseous oxygen and vaporous CCl2F2, CClF3 or CF4 in a hydrogen free gas stream through an induction coupled plasma burner where

A method for forming a coating of a fluorine containing synthetic OH ion-free quartz glass on a refractory support which comprises passing a hydrogen-free silicon compound, gaseous oxygen and vaporous CCl2F2, CClF3 or CF4 in a hydrogen free gas stream through an induction coupled plasma burner whereby said hydrogen-free silicon compound reacts with said oxygen to form synthetic OH ion-free quartz glass, the amount of said CCl2F2, CClF3 or CF4, Passed through said burner, being sufficient to yield a fluorine content in the quartz glass in an amount of at least 500 grams per kg of quartz to be produced whereby there is formed a fluorine-doped synthetic OH ion-free quartz glass and depositing said fluorine-doped synthetic OH ion-free quartz glass as a coating on a refractory support.