초록 ▼

A planar magnetron sputtering device where the magnetic lines of force pass through the center of the planar cathode at angles of 45°or less with respect to the planar surface of the cathode to thereby promote uniformity of cathode erosion. The magnetic structure may comprise mangetic tape stacked o

A planar magnetron sputtering device where the magnetic lines of force pass through the center of the planar cathode at angles of 45°or less with respect to the planar surface of the cathode to thereby promote uniformity of cathode erosion. The magnetic structure may comprise mangetic tape stacked or rolled to form a solid, flat coil parallel to the cathode where at least some of the tape is tipped or slanted with respect to the cathode. Other magnetic structures are also disclosed which promote uniformity of cathode erosion.

대표청구항 ▼

In a planar magnetron sputtering device including a cathode of target material to be sputtered; wherein said cathode includes a planar sputtering surface, at least a portion of which is disposed about a center line perpendicular to the plane of said surface, an anode adapted for establishing an acce

In a planar magnetron sputtering device including a cathode of target material to be sputtered; wherein said cathode includes a planar sputtering surface, at least a portion of which is disposed about a center line perpendicular to the plane of said surface, an anode adapted for establishing an accelerating electric field between said anode and cathode and magnetic means for establishing a magnetic field adjacent the planar sputtering surface of said cathode for lengthening the path traveled by electrons removed from said cathode; and wherein the lines of force of the magnetic field extend over the planar sputtering surface of said cathode and pass through the cathode in the vicinity of said center line, the improvement where said magnetic means comprises means for causing a majority of said magnetic lines of force to pass through said cathode in the vicinity of said center line at angles of 45°or less with respect to said planar sputtering surface to thereby enhance the uniformity of cathode erosion.