초록 ▼

A semiconductor photovoltaic generator is proposed which comprises a plurality of photovoltaic converters interconnected in series along their opposite surfaces by current-collecting contacts to form a monolithic structure. Every photovoltaic converter is provided with a p-n junction between the bas

A semiconductor photovoltaic generator is proposed which comprises a plurality of photovoltaic converters interconnected in series along their opposite surfaces by current-collecting contacts to form a monolithic structure. Every photovoltaic converter is provided with a p-n junction between the base and inverse regions. The photo-active face of the generator is made as a staircase-type structure. The area of every step is inversely proportional to the intensity of incident radiation and the width of the step is about equal to, or smaller than, the diffusion distance of minority carriers in the base region.

대표청구항 ▼

A semiconductor photovoltaic generator comprising: a plurality of semiconductor photovoltaic converters, a p-n junction in each of said photovoltaic converters located between a base region and an inverse region of each said photovoltaic converter; a plurality of current-collecting contact pairs, th

A semiconductor photovoltaic generator comprising: a plurality of semiconductor photovoltaic converters, a p-n junction in each of said photovoltaic converters located between a base region and an inverse region of each said photovoltaic converter; a plurality of current-collecting contact pairs, the number of which is equal to the number of said photovoltaic converters, said contacts being located individually on opposite sides of said photovoltaic converters and interconnecting said photovoltaic converters in series to form a monolithic structure; a photoactive face of said generator made as a staircase-type structure and having a plurality of steps, each step having a width that is about equal to, but does not exceed, the diffusion distance of minority carriers in the base region, said steps each having an area which is inversely proportional to the power of incident radiation received by it, transverse parallel grooves being made in the surfaces of said steps, the distance between the crests of said adjacent grooves not exceeding the diffusion distance of minority carriers in said base region, said p-n junction following the contour of the surface of said steps.