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Apparatus for plasma treatment of semiconductor materials 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
  • C03F-000/00
출원번호 US-0885996 (1978-03-13)
우선권정보 JP-0026862 (1977-03-11)
발명자 / 주소
  • Kudo Daiziro (Yokohama JPX)
출원인 / 주소
  • Fujitsu Limited (JPX 03)
인용정보 피인용 횟수 : 38  인용 특허 : 2

초록

An improved arrangement of electrode plates, semiconductor materials, electrode supports, and electrical power supplying circuitry is useful for plasma treatment of semiconductor materials in a reaction tube in the presence of a reaction gas.

대표청구항

An apparatus for plasma treatment of a plurality of pieces of material, said treatment comprising at least one treatment selected from coating and etching, said apparatus comprising: a reaction tube; means for introducing a gas comprising a reaction gas into said reaction tube, a plurality of conduc

이 특허에 인용된 특허 (2)

  1. Muto Steve Yoneo (Cupertino CA), Etching thin film circuits and semiconductor chips.
  2. Matsuzaki Reisaku (Tokyo JA) Hosokawa Naokichi (Tokyo JA), Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge.

이 특허를 인용한 특허 (38)

  1. McLeod Paul Stephen ; Bruno John, Apparatus for etching discs and pallets prior to sputter deposition.
  2. Engle George M. (Scottsdale AZ) Rosler Richard S. (Paradise Valley AZ), Apparatus for processing semiconductor wafers or the like.
  3. Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition.
  4. Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ) LeBlanc Rene E. (East Haven CT), Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating suscept.
  5. Malik, Muhammed Arif; Schoenbach, Karl H., Device and method for gas treatment using pulsed corona discharges.
  6. Malik,Muhammad Arif; Schoenbach,Karl J., Device and method for gas treatment using pulsed corona discharges.
  7. Nishizawa Junichi (Sendai JPX), Dry etching apparatus.
  8. Moslehi, Mehrdad M.; Davis, Cecil J., Edge sealing structure for substrate in low-pressure processing environment.
  9. Gardner Steven J. (Scottsdale AZ), Electrode boat apparatus for processing semiconductor wafers or the like.
  10. Taketoshi Kazuhisa (Sagamihara JPX) Ogusu Chihaya (Tokyo JPX), Evaporation device.
  11. Blach Thomas (Buxtehude DEX), Ionizing chamber for gaseous oxygen.
  12. Hillman Joseph T. ; Foster Robert F., Low temperature plasma-enhanced formation of integrated circuits.
  13. Robert C. Cook ; Daniel L. Brors, Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors.
  14. Paranjpe,Ajit P., Method and apparatus for layer by layer deposition of thin films.
  15. Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ) Arora Rikhit (Mesa AZ), Method and apparatus for low temperature deposition of CVD and PECVD films.
  16. Foster Robert F. ; Hillman Joseph T. ; Arora Rikhit, Method and apparatus for low temperature deposition of CVD and PECVD films.
  17. Taketoshi Kazuhisa (Sagamihara JPX) Ogusu Chihaya (Tokyo JPX), Method for fabricating a semiconductor device.
  18. Cannella, Vincent D.; Izu, Masatsugu, Method for plasma deposition of amorphous materials.
  19. Kudo Daijiro (Yokohama JPX) Ikeda Kiyoshi (Kitakyusyu JPX), Method for processing substrate materials by means of plasma treatment.
  20. Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor.
  21. Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Method for producing titanium thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating s.
  22. Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ), Method of nitridization of titanium thin films.
  23. M'Saad Hichem,FRX, Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications.
  24. Daniel L. Brors ; Robert C. Cook, Mini-batch process chamber.
  25. Maher, Jr., Joseph A.; Zafiropoulo, Arthur W., Multi-planar electrode plasma etching.
  26. Engle George M. (Phoenix AZ), Plasma enhanced chemical vapor deposition wafer holding fixture.
  27. Ray Asit K. (Mt. Kisco NY) Reisman Arnold (Yorktown Heights NY), Plasma oxidation.
  28. Engle Frank W. (525 Mission Dr. Pleasanton CA 94566), Plasma reactor and method therefor.
  29. Engle Frank W. (Pleasanton CA), Plasma reactor and method therefor.
  30. Reichelderfer, Richard F.; Vogel, Diane C.; Tang, Marian C., Process and gas mixture for etching aluminum.
  31. Nishimura Masahide (Kawasaki JPX) Takasaki Kanetake (Tokyo JPX) Koyama Kenji (Yokohama JPX) Tsukune Atsuhiro (Kawasaki JPX), Process for the formation of phosphosilicate glass coating.
  32. Hirata Yoshihiro (Hyogo JPX) Miyake Kuniaki (Hyogo JPX) Yakushiji Hisao (Hyogo JPX), Semiconductor device manufacturing unit.
  33. Itaba Takeshi (Tokyo JPX) Nishiyama Akio (Tokyo JPX) Kikuchi Noribumi (Ohmiya JPX) Shingyoji Takayuki (Ohmiya JPX) Ohsawa Yuzo (Ohmiya JPX), Sputtering apparatus.
  34. Ray Asit K. (Yorktown Heights NY), Technique for thin insulator growth.
  35. Cook, Robert C.; Brors, Daniel L., Thermal gradient enhanced CVD deposition at low pressure.
  36. Priddy Scott W. (St. Louis Park MN) Cheng Hwa (Woodbury MN), Unibody gas plasma source technology.
  37. Reavill Joseph A. (Mira Loma CA), Uniform plasma etching system.
  38. Cook Robert C. ; Brors Daniel L., Vertical plasma enhanced process apparatus and method.
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