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특허 상세정보

Silicon seed production process

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B05D-007/00    C23C-011/06   
미국특허분류(USC) 427/213 ; 427/86 ; 427/314 ; 423/348
출원번호 US-0627635 (1975-10-31)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 79  인용 특허 : 0
초록

In the production of elemental silicon by chemical vapor deposition on a particulate seed bed, the continuous generation of seed particles for use or recycle is achieved by the maintenance of a separate, subsidiary reaction zone at a temperature which favors breakage of product particles; while a higher temperature, favorable for deposition, is maintained in the principal reaction zone. The separate reaction zones may be established in separate reactors, or in a single reactor.

대표
청구항

A method for the production of elemental silicon comprising the steps of: contacting a first particulate bed of silicon particles at a temperature between 900°and 950°C. with a stream of fluidizing gas at a velocity which favors some breakage of particles; contacting a second particulate bed of silicon particles at a temperature substantially above 1000°C. with a stream of gaseous hydrogen containing a reducible silicon compound; separating relatively small silicon particles from said first bed and adding them to said second bed; and recovering relativel...

이 특허를 인용한 특허 피인용횟수: 79

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