초록 ▼

Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from ar

Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.

대표청구항 ▼

Process for fabrication of an article comprising an operation during which the article undergoing fabrication comprises an article surface and an overlying actinic processing layer, said processing layer consisting essentially of polymeric material, including the steps of (1) selectively exposing po

Process for fabrication of an article comprising an operation during which the article undergoing fabrication comprises an article surface and an overlying actinic processing layer, said processing layer consisting essentially of polymeric material, including the steps of (1) selectively exposing portions of the said processing layer to actinic radiation to define a pattern whereby ease of removal of the said portions of the processing layer by a developing agent is decreased, said ease of removal being dependent upon effective crosslinking of the said polymeric material resulting from exposure by the said actinic radiation; (2) treating the said processing layer with said developing agent to selectively remove material outside the said portions to produce a now patterned processing layer; (3) treating the article undergoing fabrication with an altering agent which preferentially alters regions of the said article surface corresponding with unexposed regions of the patterned processing layer, CHARACTERIZED IN THAT the said polymeric material consists of a polymer which may be regarded as containing at least 20 weight percent of at least one composition structurally represented as [Figure] in which at least one of the R substituents is a grouping represented as －R′Z in which the R′Z groupings need not be identical and in which Z is a halogen atom, and R′is any grouping containing from 1 to 4 atoms bridging the Z halogen to the aromatic ring.